Light emitting diode and fabrication method thereof
First Claim
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1. A light emitting diode (LED), comprising:
- a LED chip comprising a n-type semiconductor layer, an active layer and a p-type semiconductor layer;
an n-type ohmic contact electrode electrically contacting the n-type semiconductor layer;
a p-type ohmic contact electrode electrically contacting the p-type semiconductor layer; and
an AlGaInN thick film on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.
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Abstract
A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.
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Citations
47 Claims
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1. A light emitting diode (LED), comprising:
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a LED chip comprising a n-type semiconductor layer, an active layer and a p-type semiconductor layer;
an n-type ohmic contact electrode electrically contacting the n-type semiconductor layer;
a p-type ohmic contact electrode electrically contacting the p-type semiconductor layer; and
an AlGaInN thick film on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A light emitting diode (LED) fabrication method, comprising:
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providing a substrate;
forming a first pattern on the substrate;
forming a AlGaInN thick film with an oblique side on the first pattern by a epitaxy method, and the AlGaInN thick film has a first flat surface;
forming a LED chip on the first flat surface, and the LED chip comprises a n-type semiconductor layer, an active layer and a p-type semiconductor layer;
forming an n-type ohmic contact electrode on the n-type semiconductor layer;
forming a p-type ohmic contact electrode on the p-type semiconductor layer;
inverting the above-mentioned structure;
removing the substrate to expose a second flat surface of the AlGaInN thick film; and
texturing the second flat surface to form a textured surface. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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Specification