Microelectronic mechanical system and methods

• US 20050221528A1
• Filed: 05/13/2005
• Published: 10/06/2005
• Est. Priority Date: 09/13/2001
• Status: Active Grant

• Current Assignee: Mike Bruner
• Original Assignee: Mike Bruner
• Inventors: Bruner, Mike
• Granted Patent: US 7,183,637 B2
• Time in Patent Office: Days
• US Class Current: 438/50
• CPC Class Codes: B81B 2201/0271 Resonators; ultrasonic resonators
• CPC Class Codes: B81B 2203/0136 Comb structures
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 1/00333 Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
• CPC Class Codes: B81C 1/00484 Processes for releasing structures not provided for in group B81C1/00476
• CPC Class Codes: B81C 2201/0109 Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer
• CPC Class Codes: B81C 2203/0735 Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Abstract

The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF_2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

Claims

1-58. -58. (canceled)

59. A release structure for fabricating a device, the structure comprising:

an etch stop layer resistant to etching by an etchant comprising a noble gas fluoride;

a sacrificial layer over the etch stop layer, the sacrificial layer comprising a material to be selectively etched by the etchant;

a capping layer over the sacrificial layer, the capping layer serving as a passivation layer that packages the device; and

an access opening through the capping layer, the access opening exposing the sacrificial layer to the etchant to allow etching of the sacrificial layer and release the device.

60. The structure of claim 59 wherein the noble gas fluoride comprises xenon difluoride.

61. The structure of claim 59 wherein the capping layer is about 1.0 micron to about 3.0 microns thick.

62. The structure of claim 59 wherein the sacrificial layer is about 0.1 micron to about 3.0 microns thick.

63. The structure of claim 59 wherein the etch stop layer comprises a material selected from the group consisting of oxides, oxynitrides, and nitrides of silicon.

64. A release structure for fabricating a device, the structure comprising:

an etch stop layer;

a first sacrificial layer over the etch stop layer;

a patterned device layer over the first sacrificial layer;

a second sacrificial layer over the patterned device layer;

a capping layer over the second sacrificial layer, the capping layer serving as a passivation layer that packages the device; and

an access opening through the capping layer, the access opening exposing the second sacrificial layer to allow etching of the second sacrificial layer and the first sacrificial layer with a noble gas fluoride etchant to release the device.

65. The structure of claim 64 wherein the noble gas fluoride etchant comprises xenon difluoride.

66. The structure of claim 64 wherein the capping layer is about 1.0 micron to about 3.0 microns thick.

67. The structure of claim 64 wherein the sacrificial layer is about 0.1 micron to about 3.0 microns thick.

68. The structure of claim 64 wherein the first and second etch stop layers each comprises a material selected from the group consisting of oxides, oxynitrides, and nitrides of silicon.

69. The structure of claim 64 wherein the first and second sacrificial layers each comprise polysilicon.