Method for manufacturing semiconductor device

• US 20050221545A1
• Filed: 03/25/2005
• Published: 10/06/2005
• Est. Priority Date: 03/26/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takano, Tamae, Yamazaki, Shunpei, Kokubo, Chiho, Irie, Hiroaki
• Granted Patent: US 7,459,379 B2
• Time in Patent Office: Days
• US Class Current: 438/151
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02425 Conductive materials, e.g. metallic silicides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/3031 Two-side emission, e.g. transparent OLEDs [TOLED]
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/80 using temporary substrates

Abstract

When a semiconductor film is irradiated with laser light, the semiconductor film is instantaneously melted and expand locally. In order to reduce internal stress generated by this expansion, strain is locally generated in the semiconductor film. Accordingly, a variation is caused among portions with strain and portions without strain, and a variation is caused also by a difference in extent of strain. According to the present invention, after laser light irradiation, an oxide film (referred to as a chemical oxide) is formed by using a solution containing ozone (typically, ozone water) to form an oxide film of 1 to 10 nm in total, and further, a heat treatment for reducing strain of a semiconductor film (a heat treatment of heating the semiconductor film instantaneously to approximately 400 to 1000° C.) is performed.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming a first semiconductor film on an insulating surface;

irradiating the first semiconductor film with laser light;

forming an oxide film at a surface of the first semiconductor film;

forming a second semiconductor film by patterning the first semiconductor film;

oxidizing a surface of the second semiconductor film by using a solution comprising ozone; and

heating the second semiconductor film for forming a third semiconductor film.

4. The method according to claim 1, wherein the step forming the first semiconductor film comprises:

forming a semiconductor film comprising an amorphous structure on the insulating surface;

adding a metal element to the semiconductor film comprising the amorphous structure;

crystallizing the semiconductor film comprising the amorphous structure to form a semiconductor film comprising a crystalline structure; and

removing an oxide film at the surface of the semiconductor film comprising the crystalline structure.

7. The method according to claim 1, wherein an oxide film formed by irradiating the first semiconductor film with the laser light is removed between the step of irradiating the first semiconductor film with the laser light and the step of forming the oxide film at the surface of the first semiconductor film.

22. The method according to claim 4, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

2. A method for manufacturing a semiconductor device, comprising:

forming a first semiconductor film on an insulating surface;

irradiating the first semiconductor film with laser light;

forming an oxide film at a surface of the first semiconductor film;

forming a semiconductor film by patterning the first semiconductor film;

heating the first semiconductor film to form a second semiconductor film; and

oxidizing a surface of the second semiconductor film by using a solution comprising ozone.

5. The method according to claim 2, wherein the step forming the first semiconductor film comprises:

forming a semiconductor film comprising an amorphous structure on the insulating surface;

adding a metal element to the semiconductor film comprising the amorphous structure;

crystallizing the semiconductor film comprising the amorphous structure to form a semiconductor film comprising a crystalline structure; and

removing an oxide film at the surface of the semiconductor film comprising the crystalline structure.

8. The method according to claim 2, wherein an oxide film formed by irradiating the first semiconductor film with the laser light is removed between the step of irradiating the first semiconductor film with the laser light and the step of forming the oxide film at the surface of the first semiconductor film.

23. The method according to claim 5, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

3. A method for manufacturing a semiconductor device, comprising:

forming a first semiconductor film on an insulating surface;

irradiating the first semiconductor film with laser light;

forming an oxide film at a surface of the first semiconductor film;

forming a second semiconductor film by patterning the first semiconductor film;

heating the second semiconductor film to form a second semiconductor film;

oxidizing a surface of the second semiconductor film by using a solution comprising ozone; and

heating the second semiconductor film to form a third semiconductor film.

6. The method according to claim 3, wherein the step forming the first semiconductor film comprises:

forming a semiconductor film comprising an amorphous structure on the insulating surface;

adding a metal element to the semiconductor film comprising the amorphous structure;

crystallizing the semiconductor film comprising the amorphous structure to form a semiconductor film comprising a crystalline structure; and

removing an oxide film at the surface of the semiconductor film comprising the crystalline structure.

9. The method according to claim 3, wherein an oxide film formed by irradiating the first semiconductor film with the laser light is removed between the step of irradiating the first semiconductor film with the laser light and the step of forming the oxide film at the surface of the first semiconductor film.

24. The method according to claim 6, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

10. A method for manufacturing a semiconductor device, comprising:

forming a first semiconductor film comprising an amorphous structure on an insulating surface;

adding a metal element to the first semiconductor film comprising the amorphous structure;

crystallizing the first semiconductor film to form a second semiconductor film comprising a crystalline structure;

irradiating the second semiconductor film with laser light;

performing a first heat treatment of the second semiconductor film;

oxidizing a surface of the second semiconductor film by using a solution comprising ozone to form an oxide film;

forming a third semiconductor film comprising a rare gas element over the oxide film;

performing a second heat treatment to reduce the metal element in the second semiconductor film by gettering of the metal element into the second third semiconductor film;

removing the third semiconductor film; and

removing the oxide film.

13. The method according to claim 10, wherein an oxide film formed at a surface of the second semiconductor film is removed before the step of the laser light irradiation.

16. The method according to claim 10, wherein an oxide film formed by the laser light irradiation is removed after the step of the laser light irradiation.

19. The method according to claim 10, wherein the oxide film is one of a silicon oxide film and a silicon oxynitride film of 1 to 10 nm in film thickness.

25. The method according to claim 10, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

28. The method according to claim 10, wherein the rare gas element is at least one selected from the group consisting of He, Ne, Ar, Kr, and Xe.

11. A method for manufacturing a semiconductor device, comprising:

forming a first semiconductor film comprising an amorphous structure on an insulating surface;

adding a metal element to the first semiconductor film comprising the amorphous structure;

crystallizing the first semiconductor film to form a second semiconductor film comprising a crystalline structure;

irradiating the second semiconductor film with laser light;

oxidizing a surface of the second semiconductor film by using a solution comprising ozone to form an oxide film;

performing a first heat treatment of the second semiconductor film;

forming a third semiconductor film including a rare gas element over the oxide film;

performing a second heat treatment to reduce the metal element in the second semiconductor film by gettering of the metal element into the third semiconductor film;

removing the third semiconductor film; and

removing the oxide film.

14. The method according to claim 11, wherein an oxide film formed at a surface of the second semiconductor film is removed before the step of the laser light irradiation.

17. The method according to claim 11, wherein an oxide film formed by the laser light irradiation is removed after the step of the laser light irradiation.

20. The method according to claim 11, wherein the oxide film is one of a silicon oxide film and a silicon oxynitride film of 1 to 10 nm in film thickness.

26. The method according to claim 11, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

29. The method according to claim 11, wherein the rare gas element is at least one selected from the group consisting of He, Ne, Ar, Kr, and Xe.

12. A method for manufacturing a semiconductor device, comprising:

forming a first semiconductor film comprising an amorphous structure on an insulating surface;

adding a metal element to the first semiconductor film comprising the amorphous structure;

crystallizing the first semiconductor film to form a second semiconductor film including a crystalline structure;

irradiating the second semiconductor film with laser light;

performing a first heat treatment of the second semiconductor film;

oxidizing a surface of the second semiconductor film by using a solution including ozone to form an oxide film;

performing a second heat treatment of the second semiconductor film forming a third semiconductor film comprising a rare gas element over the oxide film;

performing a third heat treatment to reduce the metal element in the second semiconductor film by gettering of the metal element into the third semiconductor film;

removing the third semiconductor film; and

removing the oxide film.

15. The method according to claim 12, wherein an oxide film formed at a surface of the second semiconductor film is removed before the step of the laser light irradiation.

18. The method according to claim 12, wherein an oxide film formed by the laser light irradiation is removed after the step of the laser light irradiation.

21. The method according to claim 12, wherein the oxide film is one of a silicon oxide film and a silicon oxynitride film of 1 to 10 nm in film thickness.

27. The method according to claim 12, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, fIr, Pt, Cu, and Au.

30. The method according to claim 12, wherein the rare gas element is at least one selected from the group consisting of He, Ne, Ar, Kr, and Xe.