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Method for manufacturing semiconductor device

  • US 20050221545A1
  • Filed: 03/25/2005
  • Published: 10/06/2005
  • Est. Priority Date: 03/26/2004
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • forming a first semiconductor film on an insulating surface;

    irradiating the first semiconductor film with laser light;

    forming an oxide film at a surface of the first semiconductor film;

    forming a second semiconductor film by patterning the first semiconductor film;

    oxidizing a surface of the second semiconductor film by using a solution comprising ozone; and

    heating the second semiconductor film for forming a third semiconductor film.

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