Enhanced substrate contact for a semiconductor device
First Claim
1. A method of forming a semiconductor structure in a semiconductor wafer, the method comprising the steps of:
- forming an epitaxial layer on a least a portion of a semiconductor substrate of a first conductivity type;
forming at least one trench in an upper surface of the semiconductor wafer and partially into the epitaxial layer;
forming at least one diffusion region between a bottom wall of the at least one trench and the substrate, the at least one diffusion region providing an electrical path between the bottom wall of the at least one trench and the substrate;
doping at least one or more sidewalls of the at least one trench with a first impurity so as to form an electrical path between an upper surface of the epitaxial layer and the at least one diffusion region; and
substantially filling the at least one trench with a filler material.
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Accused Products
Abstract
A technique for forming a semiconductor structure in a semiconductor wafer includes the steps of forming an epitaxial layer on a least a portion of a semiconductor substrate of a first conductivity type and forming at least one trench in an upper surface of the semiconductor wafer and partially into the epitaxial layer. The method further includes the step of forming at least one diffusion region between a bottom wall of the trench and the substrate, the diffusion region providing an electrical path between the bottom wall of the trench and the substrate. One or more sidewalls of the trench are doped with a first impurity of a known concentration level so as to form an electrical path between an upper surface of the epitaxial layer and the at least one diffusion region. The trench is then filled with a filler material.
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Citations
26 Claims
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1. A method of forming a semiconductor structure in a semiconductor wafer, the method comprising the steps of:
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forming an epitaxial layer on a least a portion of a semiconductor substrate of a first conductivity type;
forming at least one trench in an upper surface of the semiconductor wafer and partially into the epitaxial layer;
forming at least one diffusion region between a bottom wall of the at least one trench and the substrate, the at least one diffusion region providing an electrical path between the bottom wall of the at least one trench and the substrate;
doping at least one or more sidewalls of the at least one trench with a first impurity so as to form an electrical path between an upper surface of the epitaxial layer and the at least one diffusion region; and
substantially filling the at least one trench with a filler material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor structure, comprising:
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a substrate of a first conductivity type;
an epitaxial layer formed on at least a portion of the substrate;
at least one trench formed partially into the epitaxial layer; and
at least one diffusion region formed in the epitaxial layer between a bottom wall of the at least one trench and the substrate, the at least one trench and at least one diffusion region together providing an electrical path between an upper surface of the epitaxial layer and the substrate, the at least one trench being formed by;
(i) forming at least one opening partially into the epitaxial layer, the at least one opening corresponding to the at least one trench;
(ii) doping at least one or more sidewalls of the at least one opening with a first impurity; and
(iii) substantially filling the at least one opening with a filler material. - View Dependent Claims (21, 22)
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23. A metal-oxide-semiconductor device, comprising:
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a substrate;
an epitaxial layer of a first conductivity type formed on at least a portion of the substrate;
a first source/drain region of a second conductivity type formed in the epitaxial layer proximate an upper surface of the epitaxial layer;
a second source/drain region of the second conductivity type formed in the epitaxial layer proximate the upper surface of the epitaxial layer and spaced laterally from the first source/drain region;
a gate formed above the epitaxial layer proximate the upper surface of the epitaxial layer and at least partially between the first and second source/drain regions; and
at least one trench formed in the epitaxial layer, a first end of the at least one trench being electrically connected to the first source/drain region at a second end of the at least one trench being electrically connected to the substrate, the at least one trench being formed comprising the steps of;
(i) forming at least one opening in the upper surface of the epitaxial layer and partially into the epitaxial layer, the at least one opening corresponding to the at least one trench;
(ii) forming at least one diffusion region between a bottom wall of the at least one trench and the substrate, the at least one diffusion region providing an electrical path between the bottom wall of the at least one trench and the substrate;
(iii) doping at least one or more sidewalls of the at least one trench with a first impurity so as to form an electrical path between the upper surface of the epitaxial layer and the at least one diffusion region; and
(iv) substantially filling the at least one trench with a filler material.
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24. An integrated circuit including at least one semiconductor structure, the at least one semiconductor structure comprising:
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a substrate of a first conductivity type;
an epitaxial layer formed on at least a portion of the substrate;
at least one trench formed partially into the epitaxial layer; and
at least one diffusion region formed in the epitaxial layer between a bottom wall of the at least one trench and the substrate, the at least one trench and at least one diffusion region together providing an electrical path between an upper surface of the epitaxial layer and the substrate, the at least one trench being formed by;
(i) forming at least one opening partially into the epitaxial layer, the at least one opening corresponding to the at least one trench;
(ii) doping at least one or more sidewalls of the at least one opening with a first impurity; and
(iii) substantially filling the at least one opening with a filler material. - View Dependent Claims (25, 26)
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Specification