Proximity head heating method and apparatus

• US 20050221621A1
• Filed: 03/31/2004
• Published: 10/06/2005
• Est. Priority Date: 03/31/2004
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Mikhaylichenko, Katrina, deLarios, John
• Granted Patent: US 8,062,471 B2
• Time in Patent Office: Days
• US Class Current: 438/745
• CPC Class Codes: B08B 3/02 Cleaning by the force of jets or sprays
• CPC Class Codes: C25D 17/00 Constructional parts, or assemblies thereof, of cells for electrolytic coating
• CPC Class Codes: C25D 17/001 Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
• CPC Class Codes: C25D 21/02 Heating or cooling
• CPC Class Codes: H01L 21/67023 for general liquid treatment, e.g. etching followed by cleaning
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/6704 for wet cleaning or washing
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67063 for etching
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer. An inlet port proximately disposed near the outlet port vacuums the heated fluid to remove the heated fluid from the surface of the semiconductor wafer.

Claims

1. A method for semiconductor wafer processing, comprising:

providing fluid to a proximity head;

heating the fluid within the proximity head; and

delivering the heated fluid to a surface of a semiconductor wafer for use in a wafer processing operation.

2. The method of claim 1, wherein the wafer processing operation is a cleaning operation.

3. The method of claim 1, wherein the wafer processing operation is an etching operation.

4. The method of claim 1, wherein the wafer processing operation is a plating operation.

5. The method of claim 2, wherein the fluid used in the cleaning operation is one of a cleaning chemistry and deionized water (DIW).

6. The method of claim 3, wherein the fluid used in the etching operation is an etching chemistry.

7. The method of claim 1, wherein the heating of the fluid within the proximity head further includes:

controlling a temperature of the fluid within the proximity head.

8. The method of claim 7, wherein the controlling of the temperature of the fluid within the proximity head further includes:

monitoring the temperature of the fluid within the proximity head; and

adjusting the heating of the fluid to maintain the temperature of the fluid at a desired temperature.

9. The method of claim 1, further including:

removing the heated fluid from the surface of the semiconductor wafer.

10. A proximity head for semiconductor wafer processing, comprising:

a heating portion configured to raise a temperature of a fluid flowing therethrough;

a sensor disposed within the proximity head for measuring the temperature of the fluid flowing through the heating portion;

a channel disposed in the heating portion, the channel being configured to guide the fluid through the heating portion; and

a bottom surface having at least one outlet port and at least one inlet port, the at least one outlet port being in flow communication with the channel disposed in the heating portion.

11. The proximity head of claim 10, wherein the heating portion is comprised of silicon carbide and is coupled to a power source.

12. The proximity head of claim 10, wherein the heating portion is comprised of an insulating material having an electrically conductive material dispersed therein, the electrically conductive material being coupled to a power source.

13. The proximity head of claim 12, wherein the insulating material is comprised of a ceramic material.

14. The proximity head of claim 12, wherein the electrically conductive material comprises a wire.

15. The proximity head of claim 10, wherein the channel in the heating portion is a first channel having a first flow path and the heating portion further includes a second channel having a second flow path, wherein the first flow path and the second flow are separate.

16. The proximity head of claim 10, wherein the sensor is coupled to a controller, the controller being configured to control the temperature of the fluid in the heating portion.

17. A semiconductor wafer processing system, comprising:

a fluid source;

a proximity head in flow communication with the fluid source, the proximity head including;

a heating portion configured to raise a temperature of a fluid flowing therethrough,

a sensor disposed within the proximity head for measuring the temperature of the fluid flowing through the heating portion,

a channel disposed in the heating portion, the channel being configured to guide the fluid through the heating portion, and

a bottom surface having at least one outlet port and at least one inlet port, the at least one outlet port being in flow communication with the channel disposed in the heating portion;

a first member coupled to the proximity head, the first member being configured to manipulate the proximity head; and

a second member configured to support a wafer, the second member being capable of placing the semiconductor wafer proximate to the bottom surface of the proximity head.

18. The semiconductor wafer processing system of claim 17, wherein the heating portion is comprised of silicon carbide and is coupled to a power source.

19. The semiconductor wafer processing system of claim 17, wherein the heating portion is comprised of an insulating material having an electrically conductive material dispersed therein, the electrically conductive material being coupled to a power source.

20. The semiconductor wafer processing system of claim 17, wherein the channel in the heating portion is a first channel having a first flow path and the heating portion further includes a second channel having a second flow path, wherein the first flow path and the second flow are separate.

21. The semiconductor wafer processing system of claim 17, wherein the sensor is coupled to a controller, the controller being configured to control the temperature of the fluid in the heating portion.