×

Ultraviolet group III-nitride-based quantum well laser diodes

  • US 20050224781A1
  • Filed: 12/17/2003
  • Published: 10/13/2005
  • Est. Priority Date: 12/17/2003
  • Status: Active Grant
First Claim
Patent Images

1. A III-V semiconductor laser diode, comprising:

  • a single or multiple quantum well active region having a p-side and an n-side;

    an n-type carrier confinement layer provided on the n-side of the single or multiple quantum well active region;

    a p-type carrier confinement layer provided on the p-side of the single or multiple quantum well active region; and

    undoped spacer layers provided between the single or multiple quantum well active region and the n-type and p-type carrier confinement layers.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×