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Silicon light emitting device and method of manufacturing the same

  • US 20050224817A1
  • Filed: 12/30/2004
  • Published: 10/13/2005
  • Est. Priority Date: 04/12/2004
  • Status: Abandoned Application
First Claim
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1. A silicon light emitting device comprising a silicon nano-dot light emitting layer;

  • electrodes to apply voltage level to the silicon nano-dot light emitting layer;

    a SiCN film on at least one region of the upper and lower side of the silicon nano-dot light emitting layer, to improve a light emitting efficiency.

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