Silicon light emitting device and method of manufacturing the same

• US 20050224817A1
• Filed: 12/30/2004
• Published: 10/13/2005
• Est. Priority Date: 04/12/2004
• Status: Abandoned Application

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kim, Tae Youb, Kim, Kyung Hyun, Sung, Gun Yong, Park, Nae Man
• Application Number:
  US11/024,949
• Publication Number:
  US 20050224817A1
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/26 Materials of the light emitting region
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table

Abstract

Provided is to a silicon light emitting device and the method of manufacturing the same which comprises a silicon nano-dot light emitting layer; electrodes to apply voltage level to the silicon nano-dot light emitting layer; a SiCN on at least one region of the upper or lower side of the silicon nano-dot light emitting layer film to improve a light emitting efficiency.

Claims

1. A silicon light emitting device comprising

a silicon nano-dot light emitting layer;

electrodes to apply voltage level to the silicon nano-dot light emitting layer;

a SiCN film on at least one region of the upper and lower side of the silicon nano-dot light emitting layer, to improve a light emitting efficiency.

2. The silicon light emitting device according to claim 1, wherein the silicon nano-dot light emitting layer includes a crystalline or amorphous silicon quantum dot surrounded by a matrix of amorphous silicon oxide or silicon nitride.

3. The silicon light emitting device according to claim 1, wherein the thickness of the SiCN film is 0.1 to 4 μ

m.

4. The silicon light emitting device according to claim 1, wherein the doping density of the SiCN film is 10¹⁶ to 10¹⁹ cm⁻

3.

5. The silicon light emitting device according to claim 1, wherein the energy band gap of the SiCN film is 2.0 eV to 4.0 eV.

6. The silicon light emitting device according to claim 1, wherein the transmissity of SiCN film is in the range of 60% to 99%.

7. A method of manufacturing of a silicon light emitting device comprising, the silicon light emitting device comprising a silicon nano-dot light emitting layer;

and electrodes to apply voltage level to the silicon nano-dot light emitting layer;

forming a SiCN film on at least one region of the upper and lower side of the silicon nano-dot light emitting layer, to improve a light emitting efficiency.

8. The method of the manufacturing of the silicon light emitting device according to claim 7, wherein the SiCN film is formed by PECVD using the silane gas, methane gas, nitrogen or ammonia gas.

9. The method of the manufacturing of the silicon light emitting device according to claim 8, wherein the SiCN is formed at a temperature range of 100 to 600°

C., and the growth pressure is in range of 0.1 to 10 Torr.

10. The method of the manufacturing of the silicon light emitting device according to claim 7, wherein the SiCN film is manufactured by the sputtering method using methane, nitrogen and ammonia gas, and formed using SiC or SiN as a target.

11. The method of the manufacturing of the silicon light emitting device according to claim 10, wherein the SiCN film is manufactured at the temperature range of 100 to 600°

C., and the growth pressure is in range of 1 to 10 Torr.

12. The method of the manufacturing of the silicon light emitting device according to claim 7, wherein the SiCN film is rapidly heat-treated at a temperature of 300 to 800°

C. from thirty minutes to five minutes to activate an impurity for acquiring the doping density in the range of 10 ¹⁶ to 10¹⁹ cm<sup>−

3.</sup>

13. A silicon light emitting device comprising:

a substrate;

a silicon nano-dot light emitting layer formed on a predetermined region of the upper side of the substrate;

a SiCN film formed on at least one region of the upper side or lower side of the silicon nano-dot light emitting layer, to improve the light emitting efficiency; and

a first electrode and a second electrode positioned to apply the voltage level to the silicon nano-dot light emitting layer.

14. The silicon light emitting device according to claim 13, wherein the SiCN film is formed on the upper side of the silicon nano-dot light emitting layer;

the first electrode formed on the silicon substrate at a lateral side of the silicon nano-dot light emitting layer, and the second electrode formed on a predetermined region of the upper side of the SiCN film.

15. The silicon light emitting device according to claim 14, further comprising the SiCN film between silicon nano-dot light emitting layer(?) and the silicon substrate.