Power semiconductor device with buried source electrode
First Claim
Patent Images
1. A power semiconductor device comprising:
- a base region;
a common conduction region below said base region;
a plurality of trenches extending through said base region, each trench including a bottom and opposing sidewalls;
a gate electrode disposed inside each trench and insulated from said base region by a respective gate insulation layer;
a buried source electrode in each trench disposed below and insulated from a respective gate electrode;
a source electrode connector including fingers each disposed within a respective trench and electrically connected to a respective buried source electrode; and
a source electrode in electrical contact with said fingers.
2 Assignments
0 Petitions
Accused Products
Abstract
A power semiconductor device that includes a buried source electrode disposed at the bottom of a trench below a respective gate electrode, and a source connector including a finger electrically connecting the buried source to the source contact of the device, and a process for fabricating the device.
-
Citations
18 Claims
-
1. A power semiconductor device comprising:
-
a base region;
a common conduction region below said base region;
a plurality of trenches extending through said base region, each trench including a bottom and opposing sidewalls;
a gate electrode disposed inside each trench and insulated from said base region by a respective gate insulation layer;
a buried source electrode in each trench disposed below and insulated from a respective gate electrode;
a source electrode connector including fingers each disposed within a respective trench and electrically connected to a respective buried source electrode; and
a source electrode in electrical contact with said fingers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A power semiconductor device according to claim 10, further comprising a drain contact electrically connected to said substrate.
-
11. A process for fabricating a power semiconductor device comprising:
-
forming a plurality of trenches in a trench receiving semiconductor body;
forming an oxidation retardant layer on sidewalls of said trenches;
removing a portion of the bottom of each of said trenches to form recesses at the bottom of each of said trenches, each recess including a bottom portion and opposing sidewalls;
oxidizing said bottom portion and said sidewalls of said recesses to form an insulation body;
forming a buried source electrode in each said recess adjacent said insulation body; and
forming an insulated gate structure above each said buried source electrode. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
-
Specification