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Power semiconductor device with buried source electrode

  • US 20050224871A1
  • Filed: 04/04/2005
  • Published: 10/13/2005
  • Est. Priority Date: 04/09/2004
  • Status: Active Grant
First Claim
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1. A power semiconductor device comprising:

  • a base region;

    a common conduction region below said base region;

    a plurality of trenches extending through said base region, each trench including a bottom and opposing sidewalls;

    a gate electrode disposed inside each trench and insulated from said base region by a respective gate insulation layer;

    a buried source electrode in each trench disposed below and insulated from a respective gate electrode;

    a source electrode connector including fingers each disposed within a respective trench and electrically connected to a respective buried source electrode; and

    a source electrode in electrical contact with said fingers.

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