Electro-optic modulators incorporating quantum dots

• US 20050225828A1
• Filed: 03/27/2003
• Published: 10/13/2005
• Est. Priority Date: 03/27/2002
• Status: Abandoned Application

• Current Assignee: Bookham Incorporated (Oclaro (North America), Inc.)
• Original Assignee: Bookham Incorporated (Oclaro (North America), Inc.)
• Inventors: Holden, Anthony James, Zakhleniuk, Nick
• Application Number:
  US10/509,354
• Publication Number:
  US 20050225828A1
• Time in Patent Office: Days
• US Class Current: 359/247
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/01708 in an optical wavequide structure
• CPC Class Codes: G02F 1/01791 Quantum boxes or quantum dots
• CPC Class Codes: G02F 1/2257 the optical waveguides being made of semiconducting material
• CPC Class Codes: G02F 2203/04 wavelength independent

Abstract

A modulator is formed of a semiconductor material which utilises the electro-optic effect to achieve a change in the refractive index Δn of the material under the influence of an applied electrical field F (251), in accordance with the equation: Δn=−½ n₀³ [rF+sF²]≡Δn_L+Δn_Q where n₀ is the refractive index of the material at zero field, and Δn_L and Δn_L and Δn_Q are the linear and quadratic contributions to the change in refractive index respectively, r is the linear electro-optic coefficient of the material and s is the quadratic electro-optic coefficient of the material incorporating a plurality of quantum dots and operating in a wavelength region where the value of rF is sufficiently greater than the value of sF² so as to operate with the dominant effect on the refractive index Δn being contributed by the linear effect. In this way, a device with a wide bandwidth is achieved by appropriately separating the band-gap wavelength (λ_g) and the operating wavelengths (λ).

Claims

1. A modulator device formed of a semiconductor material which utilises the electro-optic effect to achieve a change in the refractive index of the material (Δ

n) under the influence of an applied field, F, in accordance with the equation;

Δ

n=−

½

n₀³[rF+sF²]≡

Δ

n_L+Δ

n_Q

where n₀ is the refractive index of the material at zero field, and Δ

n_L and Δ

n_Q are the linear and quadratic contributions to the change in refractive index respectively, r is the linear electro-optic coefficient of the material and s is the quadratic electro-optic coefficient of the material incorporating a plurality of quantum dots and operating in a wavelength region where the value of rF is sufficiently greater than the value of sF² so as to operate with the dominant effect on Δ

n being contributed by the linear effect.

2. A device as claimed in claim 1 in which the band-gap wavelength λ

_g of the quantum dots is shorter than the wavelength of the light modulated by the modulator.

3. A device as claimed in claim 2 in which the band-gap wavelength λ

_g of the quantum dots is typically 100 nm shorter than the wavelength of the light modulated by the modulator.

11. A device as claimed in claim 1 in which the modulator or modulation region is a Mach-Zehnder Interferometer for modulating a beam of laser light, the modulator including a pair of separate waveguides through which the laser light is passed after splitting in a splitting zone and after which the light is recombined in a merge zone, there being provided opposed pairs of electrodes electrically located so as to be able to effect optical changes within the material of the waveguides, the waveguides being formed of the semiconductor material.

12. A device as claimed in claim 11 in which the Mach-Zehnder Interferometer is a push-pull modulator.

13. A device as claimed in claim 1 in which the semiconductor material is a III-V semiconductor material.

14. A device as claimed in claim 13 in which the III-V semiconductor material is based on a system selected from the group GaAs, InAs based materials and InP based materials.

15. A device as claimed in claim 1 in which the quantum dots are self-assembled quantum dots.

16. A device as claimed in claim 1 in which the quantum dots are formed of InAs based material in host GaAs based semiconductor material.

17. A device as claimed in claim 1 in which the quantum dots are formed of InGaAs based material in host GaAs based semiconductor material.

18. A device as claimed in claim 1 in which the quantum dots are formed of InAs based material in host In_xGa_1-xAs_yP_1-y based semiconductor material.

19. A device as claimed in claim 1 in which the quantum dots are formed of InGaAs based material in host In_xGa_1-xAs_yP_1-y based semiconductor material.

20. A device as claimed in claim 1 in which the quantum dots are formed by a chemical etching process.

21. A device as claimed in claim 1 in which there is a plurality of layers of quantum dots.

4. An integrated optical device including a path carrying an incoming optical signal of a wavelength λ

, means for directing at least part of the signal via a modulation region, and a path for an optical signal;

the modulation region being formed of a semiconducting material incorporating a plurality of quantum dots and exhibiting an electro-optic response thereby to permit variation of the refractive index of at least part of the modulation region;

the band-gap of the semiconducting material incorporating the quantum dots being such that the corresponding wavelength λ

_g is less than λ

.

5. An integrated optical device according to claim 4 in which λ

_g is less than 1400 nm.

6. An integrated optical device according to claim 4 in which λ

_g is less than 90% of λ

.

7. An integrated optical device according to claim 4 in which the difference between λ

_g and λ

is greater than 100 nm.

8. An integrated optical device including a path carrying an incoming optical signal of a range-of wavelengths between λ

₁ and λ

₂, means for directing at least part of the signal via a modulation region, and a path for an optical signal;

the modulation region being formed of a semiconducting material incorporating a plurality of quantum dots and exhibiting an electro-optic response thereby to permit variation of the refractive index of at least part of the modulation region;

the band-gap of the semiconducting material incorporating the quantum dots being such that the corresponding wavelength λ

_g is less than both λ

₁ and λ

₂ by an amount sufficient that the change in refractive index at λ

₁ and λ

₂ is substantially the same.

9. A device according to claim 8 in which the difference in refractive index at λ

₁ and λ

₂ is less than 0.1% per nanometer.

10. A device according to claim 8 in which the difference between λ

₁ and λ

₂ is greater than 1 nm.