Semiconductor memory device including global IO line with low-amplitude driving voltage signal applied thereto
First Claim
1. A semiconductor memory device including a global input/output line with a low-amplitude driving voltage signal applied thereto, the device comprising:
- a driver for driving a cell data having a first voltage level by a sense amplifier to a second voltage level and outputting the data to the global input/output line in response to a predetermined control signal; and
a level shifter for converting the data signal of the second voltage level transmitted through the global input/output line to the first voltage level and then outputting to a data output terminal.
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Accused Products
Abstract
Disclosed is a semiconductor memory device including a global IO line with a low-amplitude driving voltage signal applied thereto. In the device, a first driver converts a data signal of a first voltage level from a memory cell to a second voltage level in response to a read control signal, and outputs it to a global IO line. A first level shifter converts the data signal of the second voltage level from the line back to the first voltage level, and outputs it to a data output terminal. A second driver converts an external data signal of a first voltage level from a data input terminal to a second voltage level, and outputs it to a global IO line. A second level shifter converts the external data signal of the second voltage level from the line back to the first voltage level and outputs it to a write driver.
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Citations
17 Claims
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1. A semiconductor memory device including a global input/output line with a low-amplitude driving voltage signal applied thereto, the device comprising:
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a driver for driving a cell data having a first voltage level by a sense amplifier to a second voltage level and outputting the data to the global input/output line in response to a predetermined control signal; and
a level shifter for converting the data signal of the second voltage level transmitted through the global input/output line to the first voltage level and then outputting to a data output terminal. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor memory device including a global IO line with a low-amplitude driving voltage signal applied thereto, the device comprising:
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a driver for converting an external data signal of a first voltage level received from a data input terminal to a second voltage level and outputting the external data signal of the second voltage level to a global 10 line according to a write control signal; and
a level shifter for converting the external data signal of the second voltage level received via the global 10 line to the first voltage level and outputting the external data signal of the first voltage level to a write driver. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor memory device including a global IO line with a low-amplitude driving voltage signal applied thereto, the device comprising:
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a first driver for converting a cell data signal, received from a memory cell after being amplified to a first voltage level by a sense amplifier, to a second voltage level in response to a read control signal and then outputting the cell data signal of the second voltage level to a global IO line;
a first level shifter for converting the cell data signal of the second voltage level received via the global IO line to the first voltage level and then outputting the cell data signal of the first voltage level to a data output terminal;
a second driver for converting an external data signal of the first voltage level received from a data input terminal to the second voltage level and outputting the external data signal of the second voltage level to a global IO line; and
a second level shifter for converting the external data signal of the second voltage level received via the global IO line to the first voltage level and outputting the external data signal of the first voltage level to a write driver. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification