Electronic device and method of manufacture the same

• US 20050227416A1
• Filed: 05/13/2005
• Published: 10/13/2005
• Est. Priority Date: 03/13/2001
• Status: Active Grant

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Usami, Mitsuo
• Granted Patent: US 7,208,351 B2
• Time in Patent Office: Days
• US Class Current: 438/123
• CPC Class Codes: G06K 19/02 characterised by the selection of materials, e.g. to avoid wear during transport through the machine
• CPC Class Codes: G06K 19/041 Constructional details G06K19/06 takes precedence
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: G06K 19/07758 arrangements for adhering the record carrier to further objects or living beings, functioning as an identification tag
• CPC Class Codes: G06K 19/07786 the antenna being of the HF type, such as a dipole
• CPC Class Codes: G06K 7/0008 General problems related to the reading of electronic memory record carriers, independent of its reading method, e.g. power transfer
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/274 by blanket deposition of the material of the layer connector
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 2224/83205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/08 the material being an electrical insulator, e.g. glass
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/4827 Materials
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/645 : Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/01 : Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/16588 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01Q 1/2283 : mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package

Abstract

An electronic device, in which a flat plate semiconductor and dumets connected to surface electrodes on the front and back surfaces of the semiconductor and to lead wires are encapsulated in a glass tube.

Claims

1. A method of manufacturing an electronic device, comprising the steps of:

providing an IC chip having a memory to store predetermined information and first and second external electrodes provided on front and back sides thereof, respectively;

providing first and second antennae, each having a dumet at one end thereof;

providing a glass tube;

inserting a portion of the dumet of the first antenna into the glass tube;

placing the IC chip on the dumet of the first antenna arranged in the glass tube such that the first external electrode is disposed on a side of the first antenna dumet;

placing a portion of the dumet of the second antenna on the IC chip arranged in the glass tube such that the dumet of the second antenna is disposed on a side of the second external electrode; and

melting the glass tube to fix the IC chip and the dumets of the first and second antennae.

2. The method of manufacturing an electronic device according to claim 1, wherein the IC chip has a thickness in the range of 0.1 μ

m to 200 μ

m.

3. The method of manufacturing an electronic device according to claim 1, wherein the IC chip includes long sides having a length in the range of 0.01 mm to 0.5 mm.

4. The method of manufacturing an electronic device according to claim 1, wherein the first and second antennae are different in length.

5. The method of manufacturing an electronic device according to claim 1, wherein the first and second external electrodes are provided on front and back sides of the IC chip, respectively.

6. The method of manufacturing an electronic device according to claim 1, wherein the dumets are of larger diameter than a length of a diagonal of the IC chip.

7. The method of manufacturing an electronic device according to claim 6, wherein each dumet has a larger diameter than a lead wire of the corresponding antenna.

8. The method of manufacturing an electronic device according to claim 1, wherein the first and second antennae are arranged to be perpendicular to the front and back sides of the IC chip.

13. The method of manufacturing an electronic device according to claim 1, wherein a substrate voltage of the IC chip is applied from the antenna coupled to the back side of the IC chip.

14. The method of manufacturing an electronic device according to claim 1, wherein said placing of the IC chip on the dumet of the first antenna arranged in the glass tube includes shaking a jig having a plurality of openings with ultrasonic waves.

31. The method of manufacturing an electronic device according to claim 2, wherein the first and second external electrodes are provided on front and back sides of the IC chip, respectively.

32. The method of manufacturing an electronic device according to claim 3, wherein the first and second external electrodes are provided on front and back sides of the IC chip, respectively.

33. The method of manufacturing an electronic device according to claim 4, wherein the first and second external electrodes are provided on front and back sides of the IC chip, respectively.

9. A method of manufacturing an electronic device comprising the steps of:

interposing an IC chip, which has a memory to store predetermined information and first and second external electrodes provided on front and back sides thereof, between first and second antennae in a glass tube; and

melting the glass tube to encapsulate the IC chip and connections of the IC chip and the first and second antennae.

11. The method of manufacturing an electronic device according to claim 9, wherein a temperature, at which the glass tube melts, is 450°

C. or less.

12. The method of manufacturing an electronic device according to claim 9, wherein at least surfaces of lead wires of the first and second antennae are made of copper.

15. The method of manufacturing an electronic device according to claim 9, wherein said interposing includes applying pressure of 5-10 MPa to each said dumet.

10. A method of operating an electronic device, the method comprising the steps of:

when a radio wave is to be transmitted from a reader to a transponder, beginning in a state, in which no radio wave is transmitted, transmitting a radio wave, then temporarily stopping transmission of the radio wave, and since a state at that time, sending data in the transponder to the reader from the transponder.

16-30. -30. (canceled)