Method for fabricating semiconductor devices using strained silicon bearing material
First Claim
1. A method of manufacturing an integrated circuit on semiconductor substrates, the method comprising:
- providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing, the semiconductor substrate having an overlying film of material with a second lattice with a second structure and a second spacing, the second spacing placing the film of material in a first tensile mode and/or compressive mode along the film surface crystal axes across a portion of the film of material relative to the semiconductor substrate with the first structure and the first spacing; and
patterning a predetermined region in a portion of the film of material to cause the first tensile mode to change to a second tensile mode in the patterned predetermined region if the portion of the film of material is in the first tensile mode or to cause the first compressive mode to change to a second compressive mode in a patterned predetermine region if the portion of the film of material is in the first compressive mode.
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Abstract
A method of manufacturing an integrated circuit on semiconductor substrates, e.g., silicon wafer. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. In a specific embodiment, the semiconductor substrate has an overlying film of material with a second lattice with a second structure and a second spacing, the second spacing placing the film of material in a strain mode characterized by a first tensile and/or compressive mode along a single film surface crystal axis across a first portion of the film of material relative to the semiconductor substrate with the first structure and the first spacing. The method patterns a predetermined region of the first portion of the film of material to cause the first tensile and/or compressive mode in the first portion of the film of material to change to a second tensile and/or compressive mode in a resulting patterned portion of the first portion of the film of material. In a preferred embodiment, the patterns are made using a masking and etching process.
52 Citations
28 Claims
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1. A method of manufacturing an integrated circuit on semiconductor substrates, the method comprising:
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providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing, the semiconductor substrate having an overlying film of material with a second lattice with a second structure and a second spacing, the second spacing placing the film of material in a first tensile mode and/or compressive mode along the film surface crystal axes across a portion of the film of material relative to the semiconductor substrate with the first structure and the first spacing; and
patterning a predetermined region in a portion of the film of material to cause the first tensile mode to change to a second tensile mode in the patterned predetermined region if the portion of the film of material is in the first tensile mode or to cause the first compressive mode to change to a second compressive mode in a patterned predetermine region if the portion of the film of material is in the first compressive mode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of manufacturing an integrated circuit on semiconductor substrates, the method comprising:
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providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing, the semiconductor substrate having an overlying film of material with a second lattice with a second structure and a second spacing, the second spacing placing the film of material in a strain mode characterized by a first tensile and/or compressive mode along a single film surface crystal axis across a first portion of the film of material relative to the semiconductor substrate with the first structure and the first spacing; and
patterning a predetermined region of the first portion of the film of material to cause the first tensile and/or compressive mode in the first portion of the film of material to change to a second tensile and/or compressive mode in a resulting patterned portion of the first portion of the film of material. - View Dependent Claims (27, 28)
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Specification