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Capacitive pressure sensor and method of manufacture

  • US 20050229711A1
  • Filed: 04/15/2005
  • Published: 10/20/2005
  • Est. Priority Date: 04/16/2004
  • Status: Active Grant
First Claim
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1. A capacitive pressure sensor comprising:

  • evaluation circuits for measuring an applied pressure;

    a capacitive electrode;

    a counter electrode; and

    first and second silicon on insulator (SOI) wafers lying opposite of each other and being joined to each other in a vacuum-tight manner, a recess being formed between the first and second wafers, the first wafer supporting exclusively the evaluation circuits and the capacitive electrode, the second wafer having the recess formed by surface micromechanics processes, in which the counter electrode to the capacitive electrode of the first wafer is situated, the second wafer forming a cover for the first wafer.

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