In-situ dry clean chamber for front end of line fabrication

• US 20050230350A1
• Filed: 02/22/2005
• Published: 10/20/2005
• Est. Priority Date: 02/26/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kao, Chien-Teh, Lu, Xinliang, Huston, Joel M., Chang, Mei, Chang, Yu, Wang, Wei W., Phan, See-Eng, Trinh, Son, Yuan, Xiaoxiong (John), Umotoy, Sal, Chou, Jing-Pei (Connie), Lai, Chiukin (Steven)
• Application Number:
  US11/063,645
• Publication Number:
  US 20050230350A1
• Time in Patent Office: Days
• US Class Current: 216/67
• CPC Class Codes: C23C 14/022 by means of bombardment with energetic particles or radiation
• CPC Class Codes: C23C 14/50 Substrate holders
• CPC Class Codes: C23C 14/541 Heating or cooling of the substrates
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01J 37/32568 Relative arrangement or disposition of electrodes; moving means
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01L 21/02104 Forming layers deposition in general C23C; crystal growth in general C30B
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon. The support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a first electrode and a second electrode which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate.

Claims

1. A processing chamber for removing native oxides from a substrate surface, comprising:

a chamber body;

a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon, wherein the support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate; and

a lid assembly disposed on an upper surface of the chamber body, the lid assembly comprising a first electrode and a second electrode that define a plasma cavity therebetween, wherein the second electrode is heated and adapted to convectively heat the substrate.

2. The chamber of claim 1, wherein the support assembly is adapted to move vertically within the chamber body to locate the substrate in a heating position proximate the second electrode and to locate the substrate in an etch position removed from the second electrode.

3. The chamber of claim 1, wherein the support assembly comprises a receiving surface adapted to support the substrate thereon, wherein the receiving surface is disposed above a shaft coupled to a lift mechanism.

4. The chamber of claim 3, wherein the lift mechanism is adapted to move the receiving surface vertically within the chamber body to locate the substrate in a heating position proximate the second electrode and to locate the substrate in an etch position removed from the second electrode.

5. The chamber of claim 3, wherein the support assembly comprises one or more gas passageways that are in fluid communication with the receiving surface at one end thereof, and a purge gas source or vacuum source at a second end thereof.

6. The chamber of claim 5, wherein the receiving surface comprises one or more recessed channels formed on an upper surface thereof.

7. The chamber of claim 6, wherein the one or more recessed channels are substantially concentric.

8. The chamber of claim 5, wherein the shaft comprises one or more embedded gas conduits adapted to deliver one or more fluids to the gas passageways.

9. The chamber of claim 1, wherein the one or more fluid channels are disposed within the support assembly below the receiving surface.

10. The chamber of claim 3, wherein the one or more fluid channels are disposed within the support assembly below the receiving surface and the shaft comprises one or more embedded conduits that are in fluid communication with the fluid channels.

11. The chamber of claim 10, wherein the one or more embedded conduits are adapted to deliver a heating medium to the one or more fluid channels.

12. The chamber of claim 10, wherein the one or more embedded conduits are adapted to deliver a coolant to the one or more fluid channels.

13. The chamber of claim 1, wherein the second electrode comprises a blocker assembly coupled to a showerhead.

14. The chamber of claim 1, wherein the second electrode comprises a heating element coupled to a power source for controlling the temperature of the second electrode.

15. The chamber of claim 13, wherein the blocker assembly and the showerhead each comprise a plurality of apertures formed therethrough that cooperate to evenly distribute a gas into the chamber body.

16. The chamber of claim 1, wherein the plasma cavity is adapted to contain a plasma of reactive gases within the lid assembly.

17. The chamber of claim 1, wherein the first electrode is coupled to a radio frequency source, microwave source, or a source of direct current, and the second electrode is grounded.

18. A method for etching native oxides from a substrate surface, comprising:

loading a substrate to be processed within a processing chamber, the chamber comprising;

a chamber body;

a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon, wherein the support assembly includes one or more fluid channels at least partially formed therein that are capable of cooling the substrate; and

a lid assembly disposed on an upper surface of the chamber body, the lid assembly comprising a first electrode and a second electrode which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate;

generating a plasma of reactive gas within the plasma cavity;

cooling the substrate by flowing a heat transfer medium through the one or more fluid channels of the support assembly;

flowing the reactive gas through the second electrode to the substrate surface;

etching the substrate surface with the reactive gas;

heating the second electrode by applying power to a heating element in contact therewith; and

heating the substrate using the heated second electrode by placing the support assembly in close proximity to the heated second electrode.

19. The method of claim 18, wherein cooling the substrate comprises maintaining a substrate temperature below room temperature.

20. The method of claim 18, wherein heating the substrate comprises maintaining the substrate temperature above 75°

C.