In-situ dry clean chamber for front end of line fabrication
First Claim
1. A processing chamber for removing native oxides from a substrate surface, comprising:
- a chamber body;
a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon, wherein the support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate; and
a lid assembly disposed on an upper surface of the chamber body, the lid assembly comprising a first electrode and a second electrode that define a plasma cavity therebetween, wherein the second electrode is heated and adapted to convectively heat the substrate.
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Accused Products
Abstract
A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon. The support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a first electrode and a second electrode which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate.
394 Citations
20 Claims
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1. A processing chamber for removing native oxides from a substrate surface, comprising:
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a chamber body;
a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon, wherein the support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate; and
a lid assembly disposed on an upper surface of the chamber body, the lid assembly comprising a first electrode and a second electrode that define a plasma cavity therebetween, wherein the second electrode is heated and adapted to convectively heat the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for etching native oxides from a substrate surface, comprising:
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loading a substrate to be processed within a processing chamber, the chamber comprising;
a chamber body;
a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon, wherein the support assembly includes one or more fluid channels at least partially formed therein that are capable of cooling the substrate; and
a lid assembly disposed on an upper surface of the chamber body, the lid assembly comprising a first electrode and a second electrode which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate;
generating a plasma of reactive gas within the plasma cavity;
cooling the substrate by flowing a heat transfer medium through the one or more fluid channels of the support assembly;
flowing the reactive gas through the second electrode to the substrate surface;
etching the substrate surface with the reactive gas;
heating the second electrode by applying power to a heating element in contact therewith; and
heating the substrate using the heated second electrode by placing the support assembly in close proximity to the heated second electrode. - View Dependent Claims (19, 20)
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Specification