FLIP CHIP LIGHT EMITTING DIODE WITH MICROMESAS AND A CONDUCTIVE MESH
First Claim
1. A flip chip light emitting diode including:
- a light-transmissive substrate;
a base semiconducting layer of a first conductivity type disposed on the light-transmissive substrate;
a conductive mesh disposed on the base semiconducting layer and in electrically conductive contact therewith;
light-emitting micromesas disposed in openings of the conductive mesh, each light emitting micromesa having a topmost layer of a second conductivity type that is opposite the first conductivity type;
a first conductivity type electrode disposed on the base semiconducting layer and in electrical communication with the electrically conductive mesh;
an insulating layer disposed over the electrically conductive mesh; and
a second conductivity type electrode layer disposed over the insulating layer and the light-emitting micromesas, the insulating layer insulating the second conductivity type electrode layer from the electrically conductive mesh.
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Accused Products
Abstract
A flip chip light emitting diode (12) includes a light-transmissive substrate (10) with a base semiconducting layer (40) disposed thereupon. A conductive mesh (18) is disposed on the base semiconducting layer (40) and is in electrically conductive contact therewith. Light-emitting micromesas (30) are disposed in openings (20) of the conductive mesh (18). Each light emitting micromesa (30) has a topmost layer (46) of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode (14) is disposed on the base semiconducting layer (40) and is in electrical communication with the electrically conductive mesh (18). An insulating layer (60) is disposed over the electrically conductive mesh (18). A second conductivity type electrode layer (24) is disposed over the insulating layer (60) and the light-emitting micromesas (30). the insulating layer (60) insulates the second conductivity type electrode layer (24) from the electrically conductive mesh (18).
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Citations
23 Claims
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1. A flip chip light emitting diode including:
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a light-transmissive substrate;
a base semiconducting layer of a first conductivity type disposed on the light-transmissive substrate;
a conductive mesh disposed on the base semiconducting layer and in electrically conductive contact therewith;
light-emitting micromesas disposed in openings of the conductive mesh, each light emitting micromesa having a topmost layer of a second conductivity type that is opposite the first conductivity type;
a first conductivity type electrode disposed on the base semiconducting layer and in electrical communication with the electrically conductive mesh;
an insulating layer disposed over the electrically conductive mesh; and
a second conductivity type electrode layer disposed over the insulating layer and the light-emitting micromesas, the insulating layer insulating the second conductivity type electrode layer from the electrically conductive mesh. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A flip chip light emitting diode including:
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a light-transmissive substrate;
a base semiconducting layer of a first conductivity type disposed on the light-transmissive substrate;
light-emitting micromesas disposed on the base semiconducting layer;
a first conductivity type electrode disposed on the base semiconducting layer, the first conductivity type electrode including a bonding pad region and at least one conductive finger extending from the bonding pad region to effect electrical communication between the first conductivity type electrode and the light-emitting micromesas;
an insulating layer disposed over the base semiconducting layer and the at least one conductive finger of the first conductivity type electrode, the insulating layer having openings to expose the bonding pad region of the first conductivity type electrode and topmost portions of the micromesas; and
a second conductivity type electrode layer disposed over the insulating layer and the light-emitting micromesas, the insulating layer insulating the second conductivity type electrode layer from the at least one conductive finger of the first conductivity type electrode and the base semiconducting layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A flip chip light emitting diode including:
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a light transmissive substrate;
a base semiconducting layer disposed on the light transmissive substrate;
light emissive micromesas arranged on the base semiconducting layer, the light emissive micromesas defining an active area of the light emitting diode;
a continuous electrode layer disposed over the active area and contacting the tops of the micromesas, the continuous electrode layer being substantially co-extensive with the active area of the light emitting diode;
an electrically conductive mesh deposited on the base semiconducting layer in trenches between the micromesas, the electrically conductive mesh defining a continuous electrode that is substantially co-extensive with the active area of the light emitting diode; and
a discrete electrode disposed outside of the active area of the light emitting diode, the discrete electrode electrically communicating with the conductive mesh. - View Dependent Claims (21, 22, 23)
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Specification