Termination design with multiple spiral trench rings
First Claim
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1. A semiconductor device comprising:
- an active region;
a termination region including an spiral trench disposed around said active region; and
an electrically conductive but resistive body disposed within said trench, said body including a first end and a second end, said first end being electrically connected to said active region, and said second end being electrically connected to a region of an electric potential in said termination region different from an electric potential of said active region.
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Abstract
A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device.
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Citations
17 Claims
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1. A semiconductor device comprising:
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an active region;
a termination region including an spiral trench disposed around said active region; and
an electrically conductive but resistive body disposed within said trench, said body including a first end and a second end, said first end being electrically connected to said active region, and said second end being electrically connected to a region of an electric potential in said termination region different from an electric potential of said active region. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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an active region; and
a termination region, said termination region including;
a first spiral trench disposed around said active region;
a first resistive body disposed within said first trench;
a second spiral trench disposed around said active region, and spaced from said first spiral trench; and
a second resistive body disposed within said second spiral trench;
wherein each resistive body includes a first end electrically connected to said active region and a second end electrically connected to a region in said termination region. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification