High performance system-on-chip discrete components using post passivation process

• US 20050230783A1
• Filed: 02/18/2005
• Published: 10/20/2005
• Est. Priority Date: 12/21/1998
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Megic Corporation (Chipbond Technology Corporation)
• Inventors: Lin, Mou Shiung
• Granted Patent: US 8,089,155 B2
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 2224/02311 Additive methods
• CPC Class Codes: H01L 2224/02313 Subtractive methods
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03462 Electroplating
• CPC Class Codes: H01L 2224/0347 using a lift-off mask
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/03914 the bonding area, e.g. under bump metallisation [UBM], being used as a mask for patterning other parts
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05 of an individual bonding area
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05083 Three-layer arrangements
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/1132 : Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/11334 : using preformed bumps
• CPC Class Codes: H01L 2224/1146 : Plating
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/13022 : the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16265 : the item being a discrete passive component
• CPC Class Codes: H01L 2224/29124 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/29166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/29171 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48 : of an individual wire connector
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 23/3192 : Multilayer coating
• CPC Class Codes: H01L 23/522 : including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• CPC Class Codes: H01L 23/5222 : Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/5223 : Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5227 : Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/5228 : Resistive arrangements or effects of, or between, wiring layers other resistive arrangements H01L23/647
• CPC Class Codes: H01L 23/5286 : Arrangements of power or ground buses
• CPC Class Codes: H01L 23/5329 : Insulating materials
• CPC Class Codes: H01L 23/60 : Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 23/642 : Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 23/645 : Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/647 : Resistive arrangements H01L23/66, H01L23/62 take precedence
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 27/0676 : comprising combinations of diodes, or capacitors or resistors
• CPC Class Codes: H01L 27/08 : including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 : Inductors
• CPC Class Codes: H01L 28/20 : Resistors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1423 : Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/15174 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/19015 : including thin film passive components
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A system and method for forming post passivation discrete components, is described. High quality discrete components are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.

Claims

1. A post passivation system, comprising:

a semiconductor substrate, having at least one interconnect metal layer over said semiconductor substrate, and a passivation layer over the at least one interconnect metal layer, wherein the passivation layer comprises at least one passivation opening through which is exposed at least one top level metal contact point;

a post-passivation metal layer contacting said at least one top level metal contact point through said at least one passivation opening; and

a discrete component, overlying and connected to said post-passivation metal layer;

wherein said passivation opening'"'"'s width is larger than about 0.1 μ

m.

2. The system of claim 1 further comprising a polymer layer formed over said passivation layer and under said post-passivation metal layer.

3. The system of claim 2 wherein said polymer layer has at least one polymer opening, wherein said polymer opening is aligned with said passivation opening.

4. The system of claim 3 wherein said polymer opening is larger than said passivation opening.

5. The system of claim 4, wherein said discrete component is connected to one or more of said top level metal contact points through said post-passivation metal layer formed through said polymer opening and said passivation opening.

6. The system of claim 2 wherein said polymer layer comprises polyimide, benzocyclobutene (BCB), parylene or an epoxy-based material.

7. The system of claim 1 wherein said post-passivation metal layer further comprises an underbump metallurgy (UBM), formed in said at least one passivation opening.

9. The system of claim 7 wherein said post-passivation metal layer and said UBM are formed of a bottom glue/barrier layer, a seed layer over said bottom glue/barrier layer, and a bulk layer over said seed layer.

10. The system of claim 9 wherein said bottom glue/barrier layer is TiW, said seed layer is Au, and said bulk layer is Au.

11. The system of claim 9 wherein said bottom glue/barrier layer is Cr or Ti, said seed layer is Cu, and said bulk layer is Cu.

12. The system of claim 11 further comprising a cap layer of Ni formed over said bulk layer of Cu.

13. The system of claim 1 wherein said discrete component has first and second terminals, said first and second terminals each being connected downward to one of said top level metal contact points.

14. The system of claim 7, further comprising at least one solder bump or solder ball formed over said UBM.

15. The system of claim 14, wherein said each end of said discrete component is connected to one of said solder bumps or solder balls.

16. The system of claim 1 wherein said discrete component is a resistor, capacitor, or inductor.

8. (canceled)

17-45. -45. (canceled)

46. A post passivation system, comprising:

a semiconductor substrate, having a fine line metallization structure comprising a plurality of first metal lines in one or more layers over said semiconductor substrate, and a passivation layer over said fine line metallization structure, wherein said passivation layer comprises at least one passivation opening through which is exposed at least one contact pad connected to said first metal lines wherein said passivation opening'"'"'s width is larger than about 0.1 μ

m;

a post-passivation metallization structure overlying said passivation layer and connected to said at least one contact pad wherein said post-passivation metallization system comprises a plurality of top metal lines, in one or more layers, having a resistance times capacitance smaller than a resistance times capacitance of said fine line metallization structure, wherein said top metal lines comprise a different material than said first metal lines; and

a discrete component, overlying and connected to said post-passivation metallization structure.

47. The system of claim 46 further comprising a polymer layer formed over said passivation layer and under said post-passivation metallization structure.

48. The system of claim 47 wherein said polymer layer has at least one polymer opening, wherein said polymer opening is aligned with said passivation opening.

49. The system of claim 48 wherein said polymer opening is larger than said passivation opening.

50. The system of claim 49, wherein said post-passivation metallization structure is connected to said at least one contact pad through said polymer opening and said passivation opening.

51. The system of claim 47 wherein said polymer layer comprises polyimide, benzocyclobutene (BCB), parylene or an epoxy-based material.

52. The system of claim 46 wherein said post-passivation metallization structure comprises an underbump metallurgy (UBM).

53. The system of claim 52 wherein said post-passivation metallization structure further comprises metal interconnections, formed of a same material as said underbump metallurgy, and formed over said passivation layer, and connected to said at least one contact pad.

54. The structure of claim 53 further comprising silicon dioxide intermetal dielectric layers, formed between said first metal lines under said passivation layer and further comprising intermetal polymer layers, formed between metal layers in said post-passivation metallization structure over said passivation layer, to a thickness of between about 2 and 30 microns.

55. The structure of claim 54 wherein said intermetal polymer layers over said passivation layer are thicker than said intermetal dielectric layers under said passivation layer by a ratio of between 2 and 500.

56. The structure of claim 54 wherein said intermetal polymer layers are formed of a material selected from the group comprising polyimide, BCB, paralyne, parylene and elastomer.

57. The structure of claim 46 wherein said first metal lines are formed of aluminum and wherein said post-passivation metallization structure is formed of a material selected from the group comprising copper (Cu), gold (Au), and silver(Ag).

58. The structure of claim 46 wherein said first metal lines are formed of copper (Cu) and wherein said post-passivation metallization structure is formed of a material selected from the group comprising gold (Au), palladium (Pd) and nickel (Ni).

59. The structure of claim 46 wherein each metal layer of said post-passivation metallization structure comprises:

a thin adhesion layer, in said first openings and over said passivation layer;

a thin seed layer, formed over said thin adhesion layer; and

a thick metal layer formed over said seed layer.

60. The structure of claim 59 wherein said thin adhesion layer is selected from the group comprising titanium tungsten (TiW), chromium (Cr), and titanium (Ti), and has a thickness of between about 0.01 and 3 microns.

61. The structure of claim 59 wherein said thin seed layer is selected from the group comprising copper (Cu), silver(Ag), and gold (Au), and has a thickness of between about 0.05 and 3 microns.

62. The structure of claim 59 wherein said thick metal layer is selected from the group comprising copper (Cu), silver (Ag), and gold (Au), and has a thickness of between about 2 and 100 microns.

63. The system of claim 62 wherein said thick metal layer comprises copper (Cu) and further comprising a cap layer of Ni formed over said bulk layer of Cu.

64. The system of claim 46 wherein said discrete component has first and Second terminals, said first and second terminals each being connected downward to one of said top level metal contact points.

65. The system of claim 52, further comprising at least one solder bump or solder ball formed over said UBM.

66. The system of claim 65, wherein said each end of said discrete component is connected to one of said solder bumps or solder balls.

67. The system of claim 46 wherein said discrete component is a resistor, capacitor, or inductor.