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Method of manufacturing semiconductor device, acid etching resistance material and copolymer

  • US 20050233483A1
  • Filed: 02/14/2005
  • Published: 10/20/2005
  • Est. Priority Date: 03/31/2004
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device comprising a semiconductor substrate having a first electrode provided above the rear surface thereof and roughened side surfaces;

  • a light emitting layer formed above the semiconductor substrate; and

    a second electrode provided above the light emitting layer or above the rear surface;

    said method comprising;

    forming a protective film above an entire surfaces of the semiconductor substrate including the first electrode, the light emitting layer and the second electrode, excluding the side surfaces, the protective film comprising an acid etching resistance material having a repeating unit represented by the following general formula (1);

    embedded image(in the general formula (1), R1 is a hydrogen atom or methyl group;

    R3 is a cyclic group selected from an alicyclic group and an aromatic group;

    R4 is a polar group;

    R2 is a group represented by the following general formula (2); and

    j is 0 or 1;

    embedded image(in the general formula (2), R5 is a hydrogen atom or methyl group);

    treating the semiconductor substrate having the protective film formed thereof with an acidic etching solution; and

    removing the protective film with an alkaline solution.

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