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CMOS image sensor

  • US 20050233493A1
  • Filed: 06/01/2005
  • Published: 10/20/2005
  • Est. Priority Date: 12/09/2002
  • Status: Active Grant
First Claim
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1. Process architecture to fabricate CMOS image sensors allowing back-side illumination, comprising the steps of:

  • (a) Selection of a Thin-Film Silicon-On-Insulator (TF-SOI) or Thin-Film Germanium-On-Insulator (TF-GeOI) substrate, (b) Epitaxial growth of photo-diode active layers on the front-side of the substrate, (c) Fabrication of dense metal interconnects over the sensor matrix, on the front-side of the substrate, (d) Removal of substrate under the buried insulator (buried oxide) after full processing of the front-side of the TF-SOI or TF-GeOI substrates, (e) Fabrication of monolithically integrated structures on the back of the buried oxide, (f) Bonding of the back-side to a new mechanical substrate that is transparent to the wavelengths of interest.

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