Semiconductor display device and method of manufacturing the same

• US 20050233507A1
• Filed: 06/14/2005
• Published: 10/20/2005
• Est. Priority Date: 04/15/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Osame, Mitsuaki, Murakami, Satoshi, Hayakawa, Masahiko, Kato, Kiyoshi, Yamazaki, Shunpei, Fujikawa, Saishi, Hirosue, Takashi
• Granted Patent: US 7,148,510 B2
• Time in Patent Office: Days
• US Class Current: 438/149
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: Y10S 257/906 Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
• CPC Class Codes: Y10S 257/908 Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines

Abstract

A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then. covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

Claims

1. A method of manufacturing a semiconductor display device having a TFT and lead wiring, the TFT having a semiconductor film, a gate insulating film in contact with the semiconductor film, and a gate electrode in contact with the gate insulating film and overlapping the semiconductor film, and the lead wiring in contact with the gate insulating film, the method comprising the steps of:

forming a first inorganic insulating film over the lead wiring and the TFT;

forming an organic resin film over the first inorganic insulating film;

forming an opening in the organic resin film by partially exposing to the light, thereby the first inorganic insulating film being partially exposed;

forming a second inorganic insulating film over the organic resin film formed the opening and the partially exposed first inorganic insulating film;

etching the first inorganic insulating film, the second inorganic insulating film, and the gate insulating film in the opening, thereby partially exposing the lead wiring and the semiconductor film;

forming a transparent conductive film over the etched second inorganic insulating film and the partially exposed lead wiring;

polishing a surface of the transparent conductive film;

patterning the polished transparent conductive film, thereby forming a first wiring in contact with the partially exposed lead wiring and a pixel electrode;

forming a conductive film over the etched second inorganic insulating film, the partially exposed semiconductor film and the pixel electrode; and

patterning the conductive film, thereby forming a second wiring in contact with the partially exposed semiconductor film and the pixel electrode.

2. A method of manufacturing a semiconductor display device having a TFT and lead wiring, the TFT having a semiconductor film, a gate insulating film in contact with the semiconductor film, and a gate electrode in contact with the gate insulating film and overlapping the semiconductor film, and the lead wiring in contact with the gate insulating film, the method comprising the steps of:

forming a first inorganic insulating film over the lead wiring and the TFT;

forming an organic resin film over the first inorganic insulating film;

forming an opening in the organic resin film by partially exposing to the light, thereby the first inorganic insulating film being partially exposed;

forming a second inorganic insulating film over the organic resin film formed the opening and the partially exposed first inorganic insulating film;

etching the first inorganic insulating film, the second inorganic insulating film, and the gate insulating film in the opening, thereby partially exposing the lead wiring and the semiconductor film;

forming a conductive film over the etched second inorganic insulating film and the partially exposed semiconductor film;

patterning the conductive film, thereby forming the first wiring in contact with the partially exposed semiconductor film;

forming a transparent conductive film over the etched second inorganic insulating film, the partially exposed lead wiring, and the first wiring; and

polishing a surface of the transparent conductive film; and

patterning the polished transparent conductive film, thereby forming a second wiring in contact with the partially exposed lead wiring and a pixel electrode in contact with the first wiring.

3. An electronic apparatus comprising:

a display device having a protective circuit;

a TFT formed in the protective circuit and having an active layer, a gate insulating film in contact with the active layer, and a gate electrode in contact with the gate insulating film;

a first inorganic insulating film formed over the TFT;

an organic resin film formed in contact with the first inorganic insulating film;

a first opening and a second opening formed in the organic resin film;

a second inorganic insulating film formed over the organic resin film and being in contact with the first inorganic film in the first opening;

a contact hole formed through the gate insulating film and the first and second inorganic insulating films in the first opening so as to expose the active layer; and

a wiring formed on the second inorganic insulating film and connected to the active layer through the contact hole,

wherein the radius of curvature on a surface of the organic resin film is continuously lengthened as the distance from the first and second openings is increased,

a capacitor formed in the protective circuit and having a first electrode comprising the same conductive material as the gate electrode, and a second electrode comprising the same conductive material as the wiring,

wherein portions of the first and second inorganic insulating films overlap the first electrode and the second electrode in the second opening.

4. The electronic apparatus according to claim 3, wherein the protective circuit rectifies the waveform of a signal

5. The electronic apparatus according to claim 3, wherein the protective circuit has a resistor.

6. The electronic apparatus according to claim 3, wherein the organic resin film comprises an acrylic film.

7. The electronic apparatus according to claim 3, wherein each of the first and second inorganic insulating films is selected from the group consisting of a silicon nitride film, a silicon oxynitride film, and an aluminum oxynitride film.

8. The electronic apparatus according to claim 3, wherein the electronic apparatus is selected from the group consisting of a portable information terminal, an electronic book, a mobile computer, a video camera, a digital camera, a personal computer, a TV receiver, a cellular phone, and a projection display apparatus.