Semiconductor device including a channel stop structure and method of manufacturing the same
First Claim
1. A semiconductor device comprising:
- an N-type semiconductor substrate;
a transistor having a first impurity introduced region of P-type formed in a main surface of said semiconductor substrate and constituting a main junction together with said semiconductor substrate; and
a channel stop structure formed in a peripheral portion of said semiconductor substrate, said channel stop structure including, a first conductive film, a second conductive film formed on said main surface of said semiconductor substrate and on said first conductive film, said second conductive film including a material different from that of said first conductive film and extending toward said main junction, a first trench formed in said main surface of said semiconductor substrate, and a second impurity introduced region of N-type formed in said main surface of said semiconductor substrate in a portion where said first trench is formed and directly contacting said first trench, wherein said first trench is filled with said first conductive film, and a portion of said first conductive film is formed on said main surface of said semiconductor substrate said portion of said first conductive film extending toward said main junction.
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Accused Products
Abstract
It is an object to obtain a semiconductor device comprising a channel stop structure which is excellent in an effect of stabilizing a breakdown voltage and a method of manufacturing the semiconductor device. A silicon oxide film (2) is formed on an upper surface of an N−-type silicon substrate (1). An N+-type impurity implantation region (4) is formed in an upper surface (3) of the N−-type silicon substrate (1) in a portion exposed from the silicon oxide film (2). A deeper trench (5) than the N+-type impurity implantation region (4) is formed in the upper surface (3) of the N−-type silicon substrate (1). A silicon oxide film (6) is formed on an inner wall of the trench (5). A polysilicon film (7) is formed to fill in the trench (5). An aluminum electrode (8) is formed on the upper surface (3) of the N−-type silicon substrate (1). The aluminum electrode (8) is provided in contact with an upper surface of the polysilicon film (7) and the upper surface (3) of the N−-type silicon substrate (1). The aluminum electrode (8) is extended over the silicon oxide film (2) to constitute a field plate.
22 Citations
20 Claims
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1. A semiconductor device comprising:
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an N-type semiconductor substrate;
a transistor having a first impurity introduced region of P-type formed in a main surface of said semiconductor substrate and constituting a main junction together with said semiconductor substrate; and
a channel stop structure formed in a peripheral portion of said semiconductor substrate, said channel stop structure including, a first conductive film, a second conductive film formed on said main surface of said semiconductor substrate and on said first conductive film, said second conductive film including a material different from that of said first conductive film and extending toward said main junction, a first trench formed in said main surface of said semiconductor substrate, and a second impurity introduced region of N-type formed in said main surface of said semiconductor substrate in a portion where said first trench is formed and directly contacting said first trench, wherein said first trench is filled with said first conductive film, and a portion of said first conductive film is formed on said main surface of said semiconductor substrate said portion of said first conductive film extending toward said main junction. - View Dependent Claims (3, 5, 7, 8, 9, 20)
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2. (canceled)
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4. (canceled)
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6. (canceled)
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10-19. -19. (canceled)
Specification