Method of fabricating microelectromechanical system structures

• US 20050233543A1
• Filed: 04/20/2004
• Published: 10/20/2005
• Est. Priority Date: 04/20/2004
• Status: Active Grant

• Current Assignee: Agency For Science Technology and Research (Government of Singapore)
• Original Assignee: Agency For Science Technology and Research (Government of Singapore)
• Inventors: Wei, Jun, Ng, Fern Lan, Wu, Yongling, Wong, Stephen Chee Khuen
• Granted Patent: US 7,153,759 B2
• Time in Patent Office: Days
• US Class Current: 438/455
• CPC Class Codes: B81C 2203/031 Anodic bondings
• CPC Class Codes: B81C 3/001 Bonding of two components
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187

Abstract

A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one conductive or semiconductive material component. The order of stacking of the components is determined to establish interfaces between the adjacent components. A hydrogen-free amorphous film is applied to one of the component surfaces at each interface comprising an adjacent: glass component; and conductive or semiconductive component. A sol gel with or without alkaline ions film is applied to one of the component surfaces at each interface comprising an adjacent: conductive or semiconductive component; and conductive or semiconductive component. The components are simultaneously anodically bonded in the determined order of stacking.

Claims

1. A method of simultaneously bonding components, comprising the steps of:

providing at least first, second and third components;

at least one of the first, second and third components being comprised of a glass substrate and at least one of the first, second and third components being comprised of a conductive or semiconductive material; and

simultaneously anodically bonding the at least first, second and third components in a determined order of stacking at a temperature of from about 200 to 400°

C.

2. The method of claim 1, wherein the anodic bonding is conducted at a temperature of less than about 300°

C.

3. The method of claim 1, wherein the anodic bonding is conducted at a voltage of from about 100 to 1000 volts.

4. A method of simultaneously bonding components, comprising the steps of:

providing at least first, second and third components;

at least one of the first, second and third components being comprised of a glass substrate and at least one of the first, second and third components being comprised of a conductive or semiconductive material;

each of the at least first, second and third components having an upper and lower surface;

determining the order of stacking of the at least first, second and third components to establish interfaces between adjacent at least first, second and third components;

applying a hydrogen-free amorphous film to one of the component surfaces at each interface comprising an adjacent;

glass component; and

conductive or semiconductive component;

applying a sol gel with or without alkaline ions film to one of the component surfaces at each interface comprising an adjacent;

conductive or semiconductive component; and

conductive or semiconductive component; and

simultaneously anodically bonding the at least first, second and third components in the determined order of stacking.

5. The method of claim 4, wherein the simultaneous anodic bonding of the at least first, second and third components is performed at a temperature of from about 200 to 400°

C. and an applied voltage of from about 100 to 1000 volts.

6. The method of claim 4, wherein the simultaneous anodic bonding of the at least first, second and third components is performed at a temperature of less than about 300°

C.

7. The method of claim 4, wherein the sol gel with or without alkaline ions film is applied to the interface surface of the conductive or semiconductive components;

and the hydrogen-free amorphous films are applied to the interface surface of either the;

conductive or semiconductive components;

or

glass components.

8. The method of claim 4, wherein the hydrogen-free amorphous films are applied by physical vapor deposition;

and the sol gel with or without alkaline ions films are applied by spin-on, immersion or spraying.

9. The method of claim 4, wherein the hydrogen-free amorphous films are applied by physical vapor deposition achieved by laser ablation, evaporation, ion beam deposition or sputtering.

10. The method of claim 4, wherein the hydrogen-free amorphous films are comprised of silicon, silicon oxide or silicon nitride.

11. The method of claim 4, wherein the sol gel with or without alkaline ions films are formed from a solution comprised of:

methyltrimethoxysilane (MTMS);

methyltriethoxysilane (MTEOS);

tetraethylorthosilicate (TEOS);

phenyltrimethoxysilane (PhTMS);

methacryloxypropyltrimethoxysilane (MEMO);

(3-glycidoxypropyl)trimethoxysilane (GLYMO);

3-methoxypropyltrimethoxysilane (MeOPrTMS) or mixtures thereof;

an acid such as acetic acid hydrochloric acid or sulphuric acid;

water; and

alkali salts such as sodium, potassium or lithium.

12. The method of claim 4, wherein the sol gel with or without alkaline ions films each have a thickness of from about 10 nm to 10 μ

m.

13. The method of claim 4, wherein the sol gel with or without alkaline ions films each have a thickness of from about 10 to 100 nm.

14. The method of claim 4, wherein the components are cleaned and treated to render their upper and lower surfaces hydrophilic before application of the hydrogen-free amorphous films and the sol gel with or without alkaline ions films.

15. The method of claim 4, wherein the at least one of the first, second and third components being comprised of a glass substrate also includes alkaline ions.

16. The method of claim 4, wherein the components are cleaned and treated to render their upper and lower surfaces hydrophilic before bonding the at least first, second and third components.

17. The method of claim 4, wherein the at least first, second and third components are spaced apart using spacers just before the simultaneous anodically bonding step.

18. The method of claim 4, wherein the simultaneously bonded components are employed in a semiconductor device, an electronic device, a microelectromechanical system or a micro-optoelectromechanical system.

19. A method of simultaneously bonding components, comprising the steps of:

providing at least first, second and third components;

at least one of the first, second and third components being comprised of a glass substrate and at least one of the first, second and third components being comprised of a conductive or semiconductive material;

each of the at least first, second and third components having an upper and lower surface;

determining the order of stacking of the at least first, second and third components to establish interfaces between adjacent at least first, second and third components;

applying a hydrogen-free amorphous film to one of the component surfaces at each interface comprising an adjacent;

glass component; and

conductive or semiconductive component;

applying a sol gel with or without alkaline ions film to one of the component surfaces at each interface comprising an adjacent;

conductive or semiconductive component; and

conductive or semiconductive component; and

simultaneously anodically bonding the at least first, second and third components in the determined order of stacking at a temperature of from about 200 to 400°

C.

20. The method of claim 19, wherein the simultaneous anodic bonding of the at least first, second and third components is performed at an applied voltage of from about 100 to 1000 volts.

21. The method of claim 19, wherein the simultaneous anodic bonding of the at least first, second and third components is performed at a temperature of less than about 300°

C.

22. The method of claim 19, wherein the sol gel with or without alkaline ions film is applied to the interface surface of the conductive or semiconductive components;

and the hydrogen-free amorphous films are applied to the interface surface of either the;

conductive or semiconductive components;

or

glass components.

23. The method of claim 19, wherein the hydrogen-free amorphous films are applied by physical vapor deposition;

and the sol gel with or without alkaline ions films are applied by spin-on, immersion or spraying.

24. The method of claim 19, wherein the hydrogen-free amorphous films are applied by physical vapor deposition achieved by laser ablation, evaporation, ion beam deposition or sputtering.

25. The method of claim 19, wherein the hydrogen-free amorphous films are comprised of silicon, silicon oxide or silicon nitride.

26. The method of claim 19, wherein the sol gel with or without alkaline ions films are formed from a solution comprised of:

methyltrimethoxysilane (MTMS);

methyltriethoxysilane (MTEOS);

tetraethylorthosilicate (TEOS);

phenyltrimethoxysilane (PhTMS);

methacryloxypropyltrimethoxysilane (MEMO);

(3-glycidoxypropyl)trimethoxysilane (GLYMO);

3-methoxypropyltrimethoxysilane (MeOPrTMS) or mixtures thereof;

an acid such as acetic acid, hydrochloric acid or sulphuric acid;

water; and

alkali salts such as sodium, potassium or lithium.

27. The method of claim 19, wherein the sol gel with or without alkaline ions films each have a thickness of from about 10 nm to 10 μ

m.

28. The method of claim 19, wherein the sol gel with or without alkaline ions films each have a thickness of from about 10 to 100 nm.

29. The method of claim 19, wherein the components are cleaned and treated to render their upper and lower surfaces hydrophilic before application of the hydrogen-free amorphous films and the sol gel with or without alkaline ions films.

30. The method of claim 19, wherein the at least one of the first, second and third components being comprised of a glass substrate also includes alkaline ions.

31. The method of claim 19, wherein the components are cleaned and treated to render their upper and lower surfaces hydrophilic before bonding the at least first, second and third components.

32. The method of claim 19, wherein the at least first, second and third components are spaced apart using spacers just before the simultaneous anodically bonding step.

33. The method of claim 19, wherein the simultaneously bonded components are employed in a semiconductor device, an electronic device, a microelectromechanical system or a micro-optoelectromechanical system.

34. A method of simultaneously bonding components, comprising the steps of:

providing at least first, second and third components;

at least one of the first, second and third components being comprised of a glass substrate and at least one of the first, second and third components being comprised of a conductive or semiconductive material;

each of the at least first, second and third components having an upper and lower surface;

determining the order of stacking of the at least first, second and third components to establish interfaces between adjacent at least first, second and third components;

applying a hydrogen-free amorphous film to one of the component surfaces at each interface comprising an adjacent;

glass component; and

conductive or semiconductive component;

applying a sol gel with or without alkaline ions film to one of the component surfaces at each interface comprising an adjacent;

conductive or semiconductive component; and

conductive or semiconductive component;

heating the at least first, second and third components;

bringing the at least first, second and third components into contact in the determined order of stacking; and

applying a voltage to the at least first, second and third components to simultaneously bond the at least first, second and third components.

35. The method of claim 34, wherein the heating the at least first, second and third components is performed within a vacuum chamber at a temperature of from about 200 to 400°

C.

36. The method of claim 34, wherein the heating the at least first, second and third components is performed within a vacuum chamber at a temperature of less than about 400°

C.