Adhesion improvement for low k dielectrics to conductive materials

• US 20050233555A1
• Filed: 04/19/2004
• Published: 10/20/2005
• Est. Priority Date: 04/19/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Xia, Li-Qun, Lee, Albert, Rajagopalan, Nagarajan, Lakshmanan, Annamalai, Cui, Zhenjiang, Shek, Meiyee
• Application Number:
  US10/828,023
• Publication Number:
  US 20050233555A1
• Time in Patent Office: Days
• US Class Current: 438/483
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02315 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/3115 Doping the insulating layers
• CPC Class Codes: H01L 21/3148 Silicon Carbide layers
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 21/321 After treatment
• CPC Class Codes: H01L 21/7681 involving one or more buried masks
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76835 : Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/76877 : Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76886 : Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances

Abstract

Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based compound, exposing the conductive material to the reducing compound or the silicon based compound, and depositing a silicon carbide layer without breaking vacuum.

Claims

1. A method for processing a substrate, comprising:

positioning the substrate in a processing chamber, wherein the substrate comprises one or more patterned low k dielectric layers and a conductive material formed therein;

introducing a silicon based compound into the processing chamber;

forming a silicide layer of the conductive material; and

depositing a silicon carbide layer on the silicide layer without breaking vacuum.

2. The method of claim 1, wherein the silicide is formed by reacting the silicon based compound and the conductive material by a thermal enhanced process.

3. The method of claim 1, wherein the silicide is formed by reacting the silicon based compound and the conductive material by a plasma enhanced process.

4. The method of claim 1, wherein the silicon based compound comprises a carbon-free silicon based compound.

5. The method of claim 4, wherein the carbon-free silicon based compound comprises silane.

6. The method of claim 1, wherein the silicon carbide layer is deposited by:

introducing an organosilicon compound selected from the group of trimethylsilane, 2,4,6,8-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, dimethylphenylsilane, diphenylmethylsilane, and combinations thereof, and

generating a plasma of the organosilicon compound.

7. The method of claim 6, further comprising introducing an inert gas, a reducing compound, a silicon based compound, or combinations thereof during deposition of the silicon carbide layer.

8. The method of claim 1, wherein the silicon based compound comprise a carbon-containing silicon based compound.

9. The method of claim 8, wherein the carbon-containing silicon based compound comprises trimethylsilane, dimethylphenylsilane, diphenylmethylsilane, and combinations thereof.

10. The method of claim 9, further comprising introducing an inert gas with the carbon-containing silicon based compound.

11. The method of claim 10, wherein the inert gas comprise helium, argon, or a combination thereof.

12. The method of claim 10, wherein the silicide is formed by reacting the silicon carbon-containing silicon based and the conductive material by a plasma enhanced process in the presence of an inert gas.

13. The method of claim 1, further comprising:

introducing a reducing compound comprising nitrogen and hydrogen into the processing chamber;

initiating a plasma of the reducing compound in the processing chamber; and

exposing the conductive material to the plasma of the reducing compound prior to introducing the silicon based compound into the processing chamber.

14. The method of claim 13, wherein the reducing compound comprises ammonia or a mixture of nitrogen gas and hydrogen gas.

15. The method of claim 13, further comprising introducing an inert gas with the reducing compound.

16. The method of claim 1, further comprising introducing a reducing compound comprising nitrogen and hydrogen with the silicon based compound.

17. A method for processing a substrate, comprising:

positioning the substrate in a processing chamber, wherein the substrate comprises one or more patterned low k dielectric layers and a conductive material formed therein;

introducing a silicon based compound and reducing compound into the processing chamber;

forming a silicide layer of the conductive material;

initiating a plasma of the silicon based compound and reducing compound;

depositing a silicon nitride layer; and

depositing a silicon carbide layer on the silicon nitride layer without breaking vacuum.

18. The method of claim 17, wherein the silicide is formed by reacting the silicon based compound and the conductive material by a thermal enhanced process.

19. The method of claim 17, wherein the silicon based compound comprises a carbon-free silicon based compound.

20. The method of claim 19, wherein the carbon-free silicon based compound comprises silane.

21. The method of claim 17, wherein the silicon carbide layer is deposited by:

introducing an organosilicon compound selected from the group of trimethylsilane, 2,4,6,8-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, dimethylphenylsilane, diphenylmethylsilane, and combinations thereof, and

generating a plasma of the organosilicon compound.

22. The method of claim 21, further comprising introducing an inert gas, a reducing compound, a silicon based compound, or combinations thereof during deposition of the silicon carbide layer.

23. The method of claim 17, wherein the silicon based compound comprise a carbon-containing silicon based compound.

24. The method of claim 17, wherein the carbon-containing silicon based compound comprises trimethylsilane, dimethylphenylsilane, diphenylmethylsilane, and combinations thereof.

25. The method of claim 24, further comprising introducing an inert gas with the carbon-containing silicon based compound.

26. The method of claim 25, wherein the inert gas comprise helium, argon, or a combination thereof.

27. The method of claim 25, wherein the silicide is formed by reacting the silicon carbon-containing silicon based and the conductive material by a plasma enhanced process in the presence of an inert gas.

28. The method of claim 17, further comprising:

introducing a reducing compound comprising nitrogen and hydrogen into the processing chamber;

initiating a plasma of the reducing compound in the processing chamber; and

exposing the conductive material to the plasma of the reducing compound prior to introducing the silicon based compound into the processing chamber.

29. The method of claim 28, wherein the reducing compound comprises ammonia or a mixture of nitrogen gas and hydrogen gas.

30. The method of claim 28, further comprising introducing an inert gas with the reducing compound.

31. A method for processing a substrate, comprising:

positioning the substrate in a processing chamber, wherein the substrate comprises one or more patterned low k dielectric layers and a conductive material formed therein;

introducing a reducing compound comprising nitrogen and hydrogen into the processing chamber;

initiating a plasma of the reducing compound in the processing chamber;

exposing the conductive material to the plasma of the reducing compound;

introducing an organosilicon precursor in the processing chamber;

reacting the organosilicon precursor with the reducing compound;

depositing a nitrogen doped silicon carbide dielectric material on the one or more patterned low k dielectric layers and conductive material; and

depositing a silicon carbide layer on the doped silicon carbide layer without breaking vacuum.

32. The method of claim 31, wherein the reducing compound comprises ammonia or a mixture of nitrogen gas and hydrogen gas.

33. The method of claim 31, further comprising introducing an inert gas with the reducing compound.

34. The method of claim 31, wherein the organosilicon compound is selected from the group of trimethylsilane, 2,4,6,8-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, dimethylphenylsilane, diphenylmethylsilane, and combinations thereof.

35. The method of claim 31, further comprising introducing an inert gas, hydrogen gas, the reducing compound, or a combination thereof, with the organosilicon compound.

36. The method of claim 31, wherein the initiating a plasma comprises generating a plasma by a single-frequency RF power source or a dual-frequency RF power source.

37. The method of claim 31, wherein the conductive material comprises copper, doped copper, or a copper alloy.

38. The method of claim 31, wherein the one or more patterned low k dielectric layers comprise silicon carbide, doped silicon carbide, silicon oxycarbide, or combinations thereof.

39. A method for processing a substrate, comprising:

positioning the substrate in a processing chamber, wherein the substrate comprises one or more patterned low k dielectric layers and a conductive material formed therein;

introducing a reducing compound comprising nitrogen and hydrogen into the processing chamber;

initiating a first plasma of the reducing compound in the processing chamber;

exposing the conductive material to the plasma of the reducing compound;

terminating the first plasma and reducing compound;

introducing an organosilicon precursor in the processing chamber;

initiating a second plasma of the organosilicon precursor in the processing chamber;

introducing the reducing compound with the organosilicon compound; and

depositing a nitrogen doped silicon carbide dielectric material on the one or more patterned low k dielectric layers and conductive material without breaking vacuum.

40. The method of claim 39, wherein the reducing compound comprises ammonia or a mixture of nitrogen gas and hydrogen gas.

41. The method of claim 39, further comprising introducing an inert gas with the reducing compound.

42. The method of claim 39, wherein the organosilicon compound is selected from the group of trimethylsilane, 2,4,6,8-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, dimethylphenylsilane, diphenylmethylsilane, and combinations thereof.

43. The method of claim 39, further comprising introducing an inert gas, hydrogen gas, the reducing compound, or a combination thereof, with the organosilicon compound.

44. The method of claim 39, wherein the initiating a plasma comprises generating a plasma by a single-frequency RF power source or a dual-frequency RF power source.

45. The method of claim 39, wherein the conductive material comprises copper, doped copper, or a copper alloy.

46. The method of claim 39, wherein the one or more patterned low k dielectric layers comprise silicon carbide, doped silicon carbide, silicon oxycarbide, or combinations thereof.

47. A method for processing a substrate, comprising:

positioning the substrate in a processing chamber, wherein the substrate comprises one or more patterned low k dielectric layers and a conductive material formed therein;

introducing a reducing compound comprising nitrogen and hydrogen at a first flow rate into the processing chamber;

initiating a first plasma of the reducing compound in the processing chamber;

exposing the conductive material to the plasma of the reducing compound;

terminating the first plasma;

introducing an organosilicon precursor in the processing chamber;

introducing the reducing compound at a second flow rate greater than the first flow rate;

initiating a second plasma of the organosilicon precursor and the reducing compound in the processing chamber;

depositing a carbon doped silicon nitride dielectric material on the one or more patterned low k dielectric layers and conductive material;

terminating the second plasma;

introducing the organosilicon precursor in the processing chamber;

introducing the reducing compound at a third flow rate less than the second flow rate;

initiating a third plasma of the organosilicon precursor and the reducing compound in the processing chamber;

depositing a nitrogen doped silicon carbide dielectric material on the one or more patterned low k dielectric layers and conductive material without breaking vacuum.