Method of depositing dielectric materials in damascene applications
First Claim
1. A method for processing a substrate, comprising:
- positioning a substrate in a processing chamber;
introducing a processing gas comprising a compound comprising oxygen and carbon and an oxygen-free organosilicon compound; and
generating a plasma of the processing gas by applying a mixed frequency RF power to deposit an oxygen-doped silicon carbide layer on the substrate.
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Abstract
Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
105 Citations
23 Claims
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1. A method for processing a substrate, comprising:
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positioning a substrate in a processing chamber;
introducing a processing gas comprising a compound comprising oxygen and carbon and an oxygen-free organosilicon compound; and
generating a plasma of the processing gas by applying a mixed frequency RF power to deposit an oxygen-doped silicon carbide layer on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for processing a substrate comprising:
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positioning a substrate in a processing chamber;
introducing a processing gas comprising a compound comprising oxygen and carbon and an oxygen-free organosilicon compound;
generating a plasma of the processing gas by applying a mixed frequency RF power comprising a first frequency RF power is between 13 MHz and 14 MHz and a second frequency RF power is between 100 KHz and 1 MHz at a power density between about 0.03 watts/cm2 and about 1500 watts/cm2 to deposit an oxygen-doped silicon carbide layer on the substrate; and
exposing the deposited oxygen doped-silicon carbide layer to an in situ plasma of an inert gas. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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Specification