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Processes for removing residue from a workpiece

  • US 20050233589A1
  • Filed: 06/14/2005
  • Published: 10/20/2005
  • Est. Priority Date: 03/13/1998
  • Status: Abandoned Application
First Claim
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1. A method for processing a semiconductor wafer, comprising:

  • dry plasma etching a front side of the semiconductor wafer, with the dry plasma etching leaving a residue on a back side of the wafer;

    removing the residue from the back side of the wafer by;

    spinning the wafer;

    applying a liquid to the back side of the spinning wafer, with the liquid comprising de-ionized water, an acid and an oxidizer.

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