Plasma etching apparatus and plasma etching method

• US 20050236109A1
• Filed: 06/21/2005
• Published: 10/27/2005
• Est. Priority Date: 03/16/1995
• Status: Abandoned Application

• Current Assignee: Kazue Takahashi, Mitsuru Suehiro, Saburo Kanai, Tetsunori Kaji, Toshio Masuda
• Original Assignee: Kazue Takahashi, Mitsuru Suehiro, Saburo Kanai, Tetsunori Kaji, Toshio Masuda
• Inventors: Suehiro, Mitsuru, Takahashi, Kazue, Masuda, Toshio, Kanai, Saburo, Kaji, Tetsunori
• Application Number:
  US11/156,477
• Publication Number:
  US 20050236109A1
• Time in Patent Office: Days
• US Class Current: 156/345.270
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/32504 Means for preventing sputtering of the vessel
• CPC Class Codes: H01J 37/32522 Temperature

Abstract

A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.

Claims

1. A plasma processing apparatus having a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit for supplying a processing gas to the vacuum processing chamber, a lower electrode having a sample table surface for holding a sample to be processed in the vacuum processing chamber, and a vacuum pumping unit for depressurizing the vacuum processing chamber, wherein the apparatus further comprises:

a plate disposed at a position opposed to the sample table surface and facing a plasma in the vacuum processing chamber;

a disc electricity conductor disposed in contact with a side of the plate which is opposite to another side of the plate which faces the plasma;

a second power source for applying an RF frequency bias power to the disc electricity conductor; and

a unit for controlling a temperature of the plate to a predetermined value;

wherein the plate is made of one of silicon and carbon at high purity; and

wherein the disc electricity conductor and the plate have a plurality of holes for introducing the processing gas supplied from the gas supply unit into the vacuum processing chamber, respectively.

2. A plasma processing apparatus according to claim 1, wherein the distance between a lower surface at the another side of the plate which faces the plasma and the sample on the sample table surface is from 30 mm to 150 mm.

3. A plasma processing apparatus according to claim 1, wherein the unit for the controlling the temperature of the plate to the predetermined value has a heat transfer medium that circulates within the disc electricity conductor.

4. A plate for use in a plasma processing apparatus having a vacuum processing chamber, a plasma generating unit having a disc electricity conductor applied with a first power source, a gas supply unit for supplying a processing gas to the vacuum processing chamber, an electrode having a sample table surface for holding a sample to be processed in the vacuum processing chamber, and a vacuum pumping unit depressurizing the vacuum processing chamber;

wherein the plate is made of one of silicon and carbon at high purity;

wherein the plate is disposed at a position opposed to the sample table surface and facing a plasma in the vacuum processing chamber, with the disc electricity conductor being disposed in contact with a side of the plate which is opposite to another side of the plate which faces the plasma;

wherein the plate has a plurality of holes for introducing the processing gas supplied from the gas supply unit into the vacuum processing chamber;

wherein the plate is applied with an RF frequency bias power by way of the disc electricity conductor from a second power source; and

wherein the plate has a unit for controlling a temperature of the plate to a predetermined value.