Semiconductor device

• US 20050236623A1
• Filed: 04/22/2005
• Published: 10/27/2005
• Est. Priority Date: 04/23/2004
• Status: Abandoned Application

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Takechi, Kazushige, Kanou, Hiroshi
• Application Number:
  US11/111,762
• Publication Number:
  US 20050236623A1
• Time in Patent Office: Days
• US Class Current: 257/66
• CPC Class Codes: H01L 24/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1274 using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/14 Integrated circuits

Abstract

An integrated circuit is formed on a flexible substrate by using an amorphous semiconductor thin film, or a polycrystalline or a monocrystalline semiconductor thin film crystallized by laser annealing. A plurality of such flexible integrated circuit boards and mounted on a separate support substrate. This can enhance the mechanical strength of devices, such as an IC card and a liquid crystal display, and allow those devices to be manufactured at a low cost. It is also possible to provide a semiconductor device with a higher performance, on which a flexible integrated circuit board and an IC chip made from a silicon and/or glass wafer. Adhering a film substrate having a high thermal conductivity, such as a metal, to the bottom side of the flexible integrated circuit board improves the heat discharging characteristic of the integrated circuit and suppress the problem of self-heating.

Claims

1. A semiconductor device comprising:

at least one flexible integrated circuit board having

a flexible substrate, and

an integrated circuit provided on said flexible substrate and having an amorphous semiconductor thin film, or a polycrystalline or a monocrystalline semiconductor thin film crystallized by laser annealing; and

a support substrate on which said at least one flexible integrated circuit board is mounted.

2. The semiconductor device according to claim 1, wherein a part or all of said integrated circuit is electrically connected.

3. The semiconductor device according to claim 1, further comprising at least one integrated circuit provided on said support substrate and having an amorphous semiconductor thin film, or a polycrystalline or a monocrystalline semiconductor thin film crystallized by laser annealing.

4. The semiconductor device according to claim 3, wherein said integrated circuit on said flexible substrate and said at least one integrated circuit on said support substrate are electrically connected to each other.

5. The semiconductor device according to claim 1, wherein a part or all of said flexible integrated circuit board is laminated on said support substrate.

6. The semiconductor device according to claim 5, wherein a plurality of flexible integrated circuit boards are laminated and integrated circuits thereof are electrically connected to one another.

7. The semiconductor device according to claim 1, wherein said flexible substrate and/or said support substrate is made of a material selected from a group consisting of organic material, inorganic material and metal material or a mixture of two or more said materials.

8. The semiconductor device according to claim 1, wherein said flexible substrate and/or said support substrate is made of a synthetic resin or a natural resin.

9. The semiconductor device according to claims 1, wherein said flexible substrate and/or said support substrate has a thermal conductivity higher than 1 W/m·

K.

10. The semiconductor device according to claim 1, wherein said flexible substrate and/or said support substrate has a layer having a thermal conductivity higher than 1 W/m·

K on a side opposite to that side on which said integrated circuit is provided.

11. The semiconductor device according to claim 1, wherein said flexible substrate and said support substrate have through holes where a conductive material is filled to connect two integrated circuits together.

12. The semiconductor device according to claim 1, wherein said flexible substrate and said support substrate have at least one through hole where a fixing member is inserted to fix said flexible substrate and said support substrate to a casing.

26. The semiconductor device according to claim 1, wherein said flexible integrated circuit board has a memory circuit for storing data.

28. The semiconductor device according to claim 1, wherein said flexible integrated circuit board has one circuit selected from a group consisting of a microprocessor circuit which performs numerical operations, a memory circuit storing date, a display pixel circuit which has pixel circuits laid out in a matrix form to display an image, a display periphery drive circuit which controls said display pixel circuit, a power supply circuit which supplies an external circuit with a source voltage, and an antenna circuit which transmits and receives data using electric waves.

30. The semiconductor device according to claim 1, further comprising:

a display pixel circuit which has pixel circuits laid out in a matrix form to display an image; and

a display periphery drive circuit which controls said display pixel circuit.

32. The semiconductor device according to claim 1, wherein said support substrate has a display pixel circuit which has pixel circuits laid out in a matrix form to display an image, and

said flexible integrated circuit board has a display periphery drive circuit which controls said display pixel circuit.

34. The semiconductor device according to claim 28, wherein said display periphery drive circuit is one circuit selected from a group consisting of a scan line drive circuit which sends a scan pulse to said display pixel circuit, a data line drive circuit which sends a video signal to said display pixel circuit, a control circuit which controls operations of said scan line drive circuit and said data line drive circuit, and a memory circuit which stores a signal to control said operations of said scan line drive circuit and said data line drive circuit.

13. A semiconductor device comprising:

at least one flexible integrated circuit board having

a flexible substrate, and

an integrated circuit provided on said flexible substrate and having an amorphous semiconductor thin film, or a polycrystalline or a monocrystalline semiconductor thin film crystallized by laser annealing;

at least one first support substrate on which said at least one flexible integrated circuit board is mounted; and

a second support substrate on which said at least one first support substrate is mounted.

14. The semiconductor device according to claim 13, wherein a part or all of said first support substrate is laminated on said second support substrate.

15. The semiconductor device according to claim 13, wherein a part or all of said integrated circuit is electrically connected to each other.

16. The semiconductor device according to claim 13, further comprising at least one integrated circuit provided on said first support substrate and/or said second support substrate and having an amorphous semiconductor thin film, or a polycrystalline or a monocrystalline semiconductor thin film crystallized by laser annealing.

17. The semiconductor device according to claim 16, wherein said integrated circuit on said flexible substrate and said at least one integrated circuit on said first support substrate and/or said second support substrate are electrically connected together.

18. The semiconductor device according to claim 13, wherein all or a part of said flexible integrated circuit board is laminated on said first support substrate.

19. The semiconductor device according to claim 18, wherein a plurality of flexible integrated circuit boards are laminated and integrated circuits thereof are electrically connected to one another.

20. The semiconductor device according to claim 13, wherein said flexible substrate and/or said support substrate is made of a material selected from a group consisting of organic material, inorganic material and metal material or a mixture of two or more said materials.

21. The semiconductor device according to claim 13, wherein said flexible substrate and/or said support substrate is made of a synthetic resin or a natural resin.

22. The semiconductor device according to claim 13, wherein said flexible substrate and/or said support substrate has a thermal conductivity higher than 1 W/m·

K.

23. The semiconductor device according to claim 13, wherein said flexible substrate and/or said support substrate has a layer having a thermal conductivity higher than 1 W/m·

K on a side opposite to that side on which said integrated circuit is provided.

24. The semiconductor device according to claim 13, wherein said flexible substrate and said support substrate have through holes where a conductive material is filled to connect two integrated circuits together.

25. The semiconductor device according to claim 13, wherein said flexible substrate and said support substrate have at least one through hole where a fixing member is inserted to fix said flexible substrate and said support substrate to a casing.

27. The semiconductor device according to claim 13, wherein said flexible integrated circuit board has a memory circuit for storing data.

29. The semiconductor device according to claim 13, wherein said flexible integrated circuit board has one circuit selected from a group consisting of a microprocessor circuit which performs numerical operations, a memory circuit storing date, a display pixel circuit which has pixel circuits laid out in a matrix form to display an image, a display periphery drive circuit which controls said display pixel circuit, a power supply circuit which supplies an external circuit with a source voltage, and an antenna circuit which transmits and receives data using electric waves.

31. The semiconductor device according to claim 13, further comprising:

a display pixel circuit which has pixel circuits laid out in a matrix form to display an image; and

a display periphery drive circuit which controls said display pixel circuit.

33. The semiconductor device according to claim 13, wherein said support substrate has a display pixel circuit which has pixel circuits laid out in a matrix form to display an image, and

said flexible integrated circuit board has a display periphery drive circuit which controls said display pixel circuit.

35. The semiconductor device according to claim 29, wherein said display periphery drive circuit is one circuit selected from a group consisting of a scan line drive circuit which sends a scan pulse to said display pixel circuit, a data line drive circuit which sends a video signal to said display pixel circuit, a control circuit which controls operations of said scan line drive circuit and said data line drive circuit, and a memory circuit which stores a signal to control said operations of said scan line drive circuit and said data line drive circuit.

36. The semiconductor device according to claim 13, wherein said second support substrate has a display pixel circuit which has pixel circuits laid out in a matrix form to display an image, and

said first support substrate and/or said flexible integrated circuit board has a display periphery drive circuit which controls said display pixel circuit.