Charge pump circuit reducing noise and charge error and PLL circuit using the same
First Claim
1. A charge pump circuit comprising:
- a first P-channel MOS transistor having a source, a drain connected to an output terminal and a gate receiving a first signal;
a first N-channel MOS transistor having a source, a drain connected to the output terminal and a gate receiving a second signal;
a second P-channel MOS transistor having a source connected to the source of the first P-channel MOS transistor, a drain and a gate receiving an inverted signal of the first signal;
a second N-channel MOS transistor having a source connected to the source of the first N-channel MOS transistor, a drain and a gate receiving an inverted signal of the second signal;
a first current source for providing a current of first level to the source of the first P-channel MOS transistor;
a second current source for providing a current of second level to the source of the first N-channel MOS transistor;
a third current source for providing a current of third level to the drain of the second N-channel MOS transistor; and
a fourth current source for providing a current of fourth level to the drain of the second P-channel MOS transistor.
2 Assignments
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Accused Products
Abstract
Operation noise and charge error of a charge pump circuit are reduced, thereby the jitter characteristics and the spectrum characteristics of a PLL circuit are improved, and further a time period elapsed until the PLL circuit is locked is shortened. The charge pump circuit 36 receives a control signal depending on an output of a phase comparison circuit 34 from a control circuit 35, and comprises a first P-channel MOS transistor P1, a second P-channel MOS transistor P2 and a third P-channel MOS transistor P3, and a first N-channel MOS transistor N1, a second N-channel MOS transistor N2 and a third N-channel MOS transistor N3, and a first current source 61, a second current source 62, a third current source 63 and a fourth current source 64. The transistor P1 is turned on and off by an up-signal of the phase comparison circuit 34, and the transistor N1 is turned on and off by a down-signal of it, and each of the transistor P2, the transistor P3, the transistor N2 and the transistor N3 is turned on and off on the basis of the control signal of the control circuit 35, an output signal from a VCO control terminal 65 is input to a VCO 8 through a low pass filter 37 while causing current to flow through the charge pump circuit 36.
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Citations
4 Claims
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1. A charge pump circuit comprising:
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a first P-channel MOS transistor having a source, a drain connected to an output terminal and a gate receiving a first signal;
a first N-channel MOS transistor having a source, a drain connected to the output terminal and a gate receiving a second signal;
a second P-channel MOS transistor having a source connected to the source of the first P-channel MOS transistor, a drain and a gate receiving an inverted signal of the first signal;
a second N-channel MOS transistor having a source connected to the source of the first N-channel MOS transistor, a drain and a gate receiving an inverted signal of the second signal;
a first current source for providing a current of first level to the source of the first P-channel MOS transistor;
a second current source for providing a current of second level to the source of the first N-channel MOS transistor;
a third current source for providing a current of third level to the drain of the second N-channel MOS transistor; and
a fourth current source for providing a current of fourth level to the drain of the second P-channel MOS transistor. - View Dependent Claims (4)
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2. A charge pump circuit for providing an output through a first output terminal to a low pass filter having a resistor and a first capacitance that are connected in series between the first output terminal and a ground terminal, and a second capacitance connected in parallel to the first capacitance between the first output terminal and the ground terminal, comprising:
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a first P-channel MOS transistor having a source, a drain connected to the first output terminal and a gate receiving a first signal;
a first N-channel MOS transistor having a source, a drain connected to the first output terminal and a gate receiving a second signal;
a third P-channel MOS transistor having a source, a drain connected to a second output terminal which is connected between the resistor and the first capacitance, and a gate receiving the first signal;
a third N-channel MOS transistor having a source, a drain connected to the second output terminal and a gate receiving the second signal;
a first current source for providing a current of first level to the source of the first P-channel MOS transistor;
a second current source for providing a current of second level to the source of the first N-channel MOS transistor;
a third current source for providing a current of third level to the source of the third P-channel MOS transistor; and
a fourth current source for providing a current of fourth level to the source of the third N-channel MOS transistor.
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3. A charge pump circuit for receiving a control signal depending on an output of a phase comparison circuit from a control circuit that receives a first signal, a second signal and a lock detected signal of the phase comparison circuit output while a phase-locked loop circuit being in the lock state, comprising:
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a first P-channel MOS transistor having a source, a drain connected to a first output terminal and a gate receiving the first signal;
a first N-channel MOS transistor having a source, a drain connected to the first output terminal and a gate receiving the second signal;
a second P-channel MOS transistor having a source connected to the source of the first P-channel MOS transistor, a drain and a gate receiving an inverted signal of the first signal while the lock detected signal being provided;
a second N-channel MOS transistor having a source connected to the source of the first N-channel MOS transistor, a drain and a gate receiving an inverted signal of the second signal while the lock detected signal being provided;
a third P-channel MOS transistor having a source connected to the drain of the second N-channel MOS transistor, a drain connected to a second output terminal and a gate receiving the first signal while the lock detected signal being not provided;
a third N-channel MOS transistor having a source connected to the drain of the second P-channel MOS transistor, a drain connected to the second output terminal and a gate receiving the second signal while the lock detected signal being not provided;
a first current source for providing a current of first level to the source of the first P-channel MOS transistor;
a second current source for providing a current of second level to the source of the first N-channel MOS transistor;
a third current source for providing a current of third level to the drain of the second N-channel MOS transistor; and
a fourth current source for providing a current of fourth level to the drain of the second P-channel MOS transistor;
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Specification