Electro-optical device and driving method for the same

• US 20050237442A1
• Filed: 05/05/2005
• Published: 10/27/2005
• Est. Priority Date: 11/13/1990
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hiroki, Masaaki, Mase, Akira, Yamazaki, Shunpei
• Granted Patent: US 7,462,515 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/134345 Subdivided pixels, e.g. for grey scale or redundancy
• CPC Class Codes: G02F 1/13624 having more than one switching element per pixel
• CPC Class Codes: G02F 1/136245 having complementary transistors
• CPC Class Codes: G09G 2300/0809 Several active elements per pixel in active matrix panels
• CPC Class Codes: G09G 2300/0823 used to establish symmetry in driving, e.g. with polarity inversion
• CPC Class Codes: G09G 2330/08 Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
• CPC Class Codes: G09G 3/3614 Control of polarity reversal in general
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: G09G 3/3659 the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A display and a driving method for the same capable of constructing clear visual images is described. In the display, a plurality of conductive pads are opposed to a back electrode with a light influencing medium such as a liquid crystal layer. Control signals are supplied to the conductive pads through complimentary transistors comprise a p-channel field effect transistor and an n-channel field effect transistor connected between V_DD and V_SS lines of a control circuit, which also supplies a bias voltage to the back electrode and gate control signals to the gate terminals of the p-channel field effect transistor and the n-channel field effect transistor. During operation, the bias voltage is inverted in order to invert the polarity of control signal applied across the light influencing medium.

Claims

1. (canceled)

2. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film comprising silicon oxide over a substrate;

forming a semiconductor film comprising amorphous silicon on the first insulating film, wherein the formation of the first insulating film and the semiconductor film is successively performed in a multi-chamber apparatus;

crystallizing the semiconductor film;

patterning the crystallized semiconductor film to form a semiconductor island;

forming a second insulating film comprising silicon oxide over the semiconductor island;

forming a gate electrode over the semiconductor island with the second insulating film interposed therebetween;

forming an interlayer insulating film over the gate electrode and the semiconductor island;

forming an organic resin film over the interlayer insulating film; and

forming a pixel electrode over the organic resin film.

3. The method according to claim 2 wherein said first insulating film and said semiconductor film are formed by sputtering.

4. The method according to claim 2 wherein said first insulating film is formed in a first chamber of the multi-chamber apparatus and said semiconductor film is formed in a second chamber of the multi-chamber apparatus, said second chamber being different from said first chamber.

5. The method according to claim 2 wherein said organic resin film comprises polyimide.

6. The method according to claim 2 wherein said semiconductor device includes a liquid crystal display.

7. The method according to claim 2 wherein said semiconductor film comprises semi-amorphous or semi-crystalline silicon after the step of crystallizing.

8. The method according to claim 2 further comprising a N-channel TFT and a P-channel TFT both electrically connected to said pixel electrode.

9. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film comprising silicon oxide over a substrate;

forming a semiconductor film comprising amorphous silicon on the first insulating film, wherein the formation of the first insulating film and the semiconductor film is successively performed in a multi-chamber apparatus;

crystallizing the semiconductor film;

patterning the crystallized semiconductor film to form a semiconductor island;

forming a second insulating film comprising silicon oxide over the semiconductor island;

forming an organic resin film over the second insulating film; and

forming a pixel electrode over the organic resin film.

10. The method according to claim 9 wherein said first insulating film and said semiconductor film are formed by sputtering.

11. The method according to claim 9 wherein said first insulating film is formed in a first chamber of the multi-chamber apparatus and said semiconductor film is formed in a second chamber of the multi-chamber apparatus, said second chamber being different from said first chamber.

12. The method according to claim 9 wherein said semiconductor device includes a liquid crystal display.

13. The method according to claim 9 wherein said semiconductor film comprises semi-amorphous or semi-crystalline silicon after the step of crystallizing.

14. The method according to claim 9 further comprising a N-channel TFT and a P-channel TFT both electrically connected to said pixel electrode.

15. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film comprising silicon oxide over a substrate;

forming a semiconductor film comprising amorphous silicon on the first insulating film, wherein the formation of the first insulating film and the semiconductor film is successively performed;

crystallizing the semiconductor film;

patterning the crystallized semiconductor film to form a semiconductor island;

forming a second insulating film comprising silicon oxide over the semiconductor island;

forming a gate electrode over the semiconductor island with the second insulating film interposed therebetween;

forming an interlayer insulating film over the gate electrode and the semiconductor island;

forming an organic resin film over the interlayer insulating film; and

forming a pixel electrode over the organic resin film.

16. The method according to claim 15 wherein said first insulating film and said semiconductor film are formed by sputtering.

17. The method according to claim 15 wherein said semiconductor film comprises semi-amorphous or semi-crystalline silicon after the step of crystallizing.

18. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film comprising silicon oxide over a substrate;

forming a semiconductor film comprising amorphous silicon on the first insulating film, wherein the formation of the first insulating film and the semiconductor film is successively performed;

crystallizing the semiconductor film;

patterning the crystallized semiconductor film to form a semiconductor island;

forming a second insulating film comprising silicon oxide over the semiconductor island;

forming an organic resin film over the second insulating film; and

forming a pixel electrode over the organic resin film.

19. The method according to claim 18 wherein said first insulating film and said semiconductor film are formed by sputtering.

20. The method according to claim 18 wherein said semiconductor film comprises semi-amorphous or semi-crystalline silicon after the step of crystallizing.

21. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film comprising silicon oxide over a substrate;

forming a semiconductor film comprising amorphous silicon on the first insulating film, wherein the formation of the first insulating film and the semiconductor film is successively performed;

crystallizing the semiconductor film;

patterning the crystallized semiconductor film to form a semiconductor island;

forming a second insulating film comprising silicon oxide over the semiconductor island wherein said second insulating film contains a halogen element;

forming a gate electrode over the semiconductor island with the second insulating film interposed therebetween;

forming an interlayer insulating film over the gate electrode and the semiconductor island;

forming an organic resin film over the interlayer insulating film; and

forming a pixel electrode over the organic resin film.

22. The method according to claim 21 wherein said first insulating film and said semiconductor film are formed by sputtering.

23. The method according to claim 21 wherein said semiconductor film comprises semi-amorphous or semi-crystalline silicon after the step of crystallizing.

24. The method according to claim 21 wherein said first insulating film and said semiconductor film are successively formed in a multi-chamber apparatus.

25. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film comprising silicon oxide over a substrate;

forming a semiconductor film comprising amorphous silicon on the first insulating film, wherein the formation of the first insulating film and the semiconductor film is successively performed;

crystallizing the semiconductor film;

patterning the crystallized semiconductor film to form a semiconductor island;

forming a second insulating film comprising silicon oxide over the semiconductor island wherein said second insulating film contains a halogen element;

forming an organic resin film over the second insulating film; and

forming a pixel electrode over the organic resin film.

26. The method according to claim 25 wherein said first insulating film and said semiconductor film are formed by sputtering.

27. The method according to claim 25 wherein said semiconductor film comprises semi-amorphous or semi-crystalline silicon after the step of crystallizing.

28. The method according to claim 25 wherein said first insulating film and said semiconductor film are successively formed in a multi-chamber apparatus.