Laser diode having an active layer containing N and operable in a 0.6mum wavelength band

• US 20050238075A1
• Filed: 03/16/2005
• Published: 10/27/2005
• Est. Priority Date: 04/13/1998
• Status: Active Grant

• Current Assignee: Naoto Jikutani, Shunichi Sato, Takashi Takahashi
• Original Assignee: Naoto Jikutani, Shunichi Sato, Takashi Takahashi
• Inventors: Takahashi, Takashi, Sato, Shunichi, Jikutani, Naoto
• Granted Patent: US 7,384,479 B2
• Time in Patent Office: Days
• US Class Current: 372/45.12
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G11B 7/127 Lasers; Multiple laser arrays lasers per se H01S
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/2201 in a specific crystallographic orientation
• CPC Class Codes: H01S 5/2214 based on oxides or nitrides
• CPC Class Codes: H01S 5/2231 with inner confining structure only between the active layer and the upper electrode
• CPC Class Codes: H01S 5/3086 doping of the active layer
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/32358 containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
• CPC Class Codes: H01S 5/32375 In(As)N with small amount of P, or In(As)P with small amount of N
• CPC Class Codes: H01S 5/3403 having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser
• CPC Class Codes: H01S 5/3436 based on InGa(Al)P

Abstract

An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.

Claims

1-28. -28. (canceled)

29. An optical semiconductor device, comprising:

a substrate;

a first layer of a III-V compound semiconductor material formed on said substrate epitaxially, said first layer being substantially free from N;

an active layer of a III-V compound semiconductor material formed on said first layer epitaxially in intimate contact therewith, said active layer containing N as a group V element;

a second layer of a III-V compound semiconductor material formed on said active layer epitaxially in intimate contact therewith, said second layer being substantially free from N,

an interface between said first layer and said active layer contains C.

30. A semiconductor layered structure, comprising;

a first epitaxial layer of AlGaInNP having a composition represented by compositional parameters x1, y1 and z1 (0≦

x1<

1, 0<

y1≦

1, 0<

z1<

1) as Al_x1Ga_y1In_(1-x1-y1)N_z1P_(1-z1);

a second epitaxial layer of AlGaInP having a composition represented by compositional parameters x2 and y2 as Al_x2Ga_y2In_(1-x2-y2)P, said second epitaxial layer being disposed adjacent to said first epitaxial layer; and

a third epitaxial layer of AlGaInP having a composition represented by compositional parameters x3 and y3 as Al_x3Ga_y3In_(1-x3-y3)P, said third epitaxial layer being disposed between said first and second epitaxial layers, said first through third epitaxial layers maintaining an epitaxy with each other;

wherein said compositional parameters are set so as to satisfy the relationship;

0≦

x3<

x2≦

1;

0<

y3≦

1.

31. A semiconductor light-emitting device, comprising:

a substrate of a first conductivity type;

a first cladding layer of AlGaInP of said first conductivity type provided on said substrate;

an active layer of undoped AlGaInNP provided on said cladding layer; and

a second cladding layer of AlGaInP of a second, opposite conductivity type provided on said active layer;

said active layer having a composition represented by compositional parameters x1, y1 and z1 as Al_x1Ga_y1In_(1-x1-y1)N_z1P_(1-z1)(0≦

x1<

1, 0<

y1≦

, 1, 0<

z1<

1), said first cladding layer having a composition represented by compositional parameters x2 and y2 as Al_x2Ga_y2In_(1-x2-y2)P,

wherein there is provided an intermediate layer of AlGaInP between said first cladding layer and said active layer, said intermediate layer having a composition represented by compositional parameters x3, y3 and z3 as Al_x3Ga_y3In_(1-x3-y3)P,

said compositional parameters satisfying the relationship;

0≦

x3<

x2≦

1;

0<

y3<

1.

32. A semiconductor light-emitting device as claimed in claim 31, wherein said intermediate layer has a composition represented by a compositional parameter y4 as Ga_y4In_(1-y4)P(0<

y4<

1).

33. A semiconductor light-emitting device, comprising:

a substrate of a first conductivity type;

a first cladding layer said first conductivity type provided on said substrate;

a first optical waveguide layer of undoped AlGaInP provided on said first cladding layer;

an active layer of undoped AlGaInNP provided on said optical waveguide layer;

a second optical waveguide layer of undoped AlGaInP provided on said active layer; and

a second cladding layer of a second, opposite conductivity type provided on said second optical waveguide layer said active layer having a composition represented by compositional parameters x1, y1 and z1 as Al_x1Ga_y1In_(1-x1-y1)N_z1P_(1-z1)(0≦

x1<

1, 0<

y1≦

1, 0<

z1<

1), said first optical waveguide layer having a composition represented by compositional parameters x2 and y2 as Al_x2Ga_y2In_(1-x2-y2)P,

wherein there is provided an intermediate layer of AlGaInP between said first optical waveguide layer and said active layer, said intermediate layer having a composition represented by compositional parameters x3 and y3 as Al_x3Ga_y3In_(1-x3-y3)P,

said compositional parameters satisfying the relationship;

0≦

x3<

x2≦

1;

0<

y3≦

1.

34. A semiconductor light-emitting device as claimed in claim 33, wherein said intermediate layer has a composition represented by a compositional parameter y4 as Ga_y4In_(1-y4)P(0<

y4<

1).

35-37. -37. (canceled)