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Method for forming self-aligned contact in semiconductor device

  • US 20050239282A1
  • Filed: 09/15/2004
  • Published: 10/27/2005
  • Est. Priority Date: 04/23/2004
  • Status: Active Grant
First Claim
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1. A method for forming a self-aligned contact in a semiconductor device, comprising the steps of:

  • (a) providing a substrate having at least one gate structure and at least one junction region adjacent said gate structure;

    (b) forming a first insulating layer along a profile of said gate structure and said junction region;

    (c) forming a temporary layer on said first insulating layer;

    (d) selectively removing a portion of said temporary layer while leaving a plug portion of said temporary layer over said junction region;

    (e) forming a second insulating layer in a region where said portion of said temporary layer is removed;

    (f) removing said plug portion to form a contact hole;

    (g) removing a portion of said first insulating layer at a bottom of said contact hole; and

    (h) forming a conductive contact in said contact hole;

    wherein a third insulating layer is formed on side walls of said plug portion after said step

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