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TWO-STEP STRIPPING METHOD FOR REMOVING VIA PHOTORESIST DURING THE FABRICATION OF PARTIAL-VIA DUAL DAMASCENE FEATURES

  • US 20050239286A1
  • Filed: 10/27/2004
  • Published: 10/27/2005
  • Est. Priority Date: 04/23/2004
  • Status: Abandoned Application
First Claim
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1. A two-step stripping method for removing via photoresist during the fabrication of trench-first partial-via dual damascene features, comprising:

  • preparing a semiconductor substrate provided thereon with a dielectric layer, a hard mask layer over the dielectric layer, and a first bottom anti-reflection coating (BARC) layer over the hard mask layer, wherein the hard mask layer comprises a metal layer;

    forming, on the first BARC layer, a pattern of a trench photoresist layer comprising a trench opening exposing a portion of the subjacent first BARC layer;

    etching the exposed first BARC layer and the underlying hard mask layer through the trench opening to form a trench recess in the hard mask layer;

    stripping the trench photoresist layer and the first BARC layer;

    depositing a second BARC layer over the hard mask layer and filling the trench recess thereof;

    forming, on the second BARC layer, a pattern of a via photoresist layer comprising a via opening, which is located above the trench recess, thereby exposing a portion of the subjacent second BARC layer;

    etching the exposed second BARC layer, the underlying hard mask layer and the dielectric layer through the via opening to form a via recess in an upper portion of the dielectric layer; and

    stripping the via photoresist layer using a two-step cleaning process comprising a first cleaning step;

    contacting the via photoresist layer with hydrogen-free fluorocarbon plasma in a short period of time not exceeding 20 seconds, and thereafter, proceeding a second cleaning step;

    completely removing the via photoresist layer by using reducing plasma.

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