Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas

• US 20050241580A1
• Filed: 04/28/2005
• Published: 11/03/2005
• Est. Priority Date: 04/30/2004
• Status: Abandoned Application

• Current Assignee: Jusung Engineering Company Limited
• Original Assignee: Jusung Engineering Company Limited
• Inventors: Park, Hea Jin, Na, Sung Min
• Application Number:
  US11/119,313
• Publication Number:
  US 20050241580A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/42 Silicides
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: Y02E 30/30 Nuclear fission reactors

Abstract

Disclosed are thin film deposition system and method. The thin film deposition system includes a reaction chamber; at least one susceptor installed in the reaction chamber for mounting a substrate thereon; a first gas sprayer rotatably located above the susceptor; and at least one second gas sprayer installed above the first gas sprayer for spraying purge gas. The thin film deposition system increases the absorption rate of source gas onto the surface of the substrate, efficiently shortens the supply cycles of the gases to improve the productivity thereof, and improves the cleaning effect of the purge gas so that a thin film is stably deposited on the substrate.

Claims

1. A thin film deposition system comprising:

a reaction chamber;

at least one susceptor installed in the reaction chamber for mounting a substrate thereon;

a first gas sprayer rotatably located above the susceptor; and

at least one accelerating means located at a position corresponding to the susceptor for vertically accelerating gases supplied from the first gas sprayer.

2. The thin film deposition system as set forth in claim 1, wherein the accelerating means is a second gas sprayer.

3. The thin film deposition system as set forth in claim 1, wherein:

source gas and reaction gas are supplied along a central shaft of the first gas sprayer; and

the first gas sprayer includes at least one source gas sprayer extended towards the inner wall of the reaction chamber for spraying the source gas, and at least one reaction gas sprayer extended towards the inner wall of the reaction chamber for spraying the reaction gas.

4. The thin film deposition system as set forth in claim 1, wherein a plurality of the source gas sprayers and a plurality of the reaction gas sprayers are alternately installed parallel with the substrates.

5. The thin film deposition system as set forth in claim 4, wherein the source gas sprayers and the reaction gas sprayers meet at a right angle, and a plurality of jet orifices are formed through lower portions of the source and reaction gas sprayers.

6. The thin film deposition system as set forth in claim 2, further comprising:

a rotary shaft; and

a support, on which a plurality of the susceptors are installed, connected to the rotary shaft and rotated centering on the rotary shaft.

7. The thin film deposition system as set forth in claim 6, wherein the second gas sprayer is installed above the first gas sprayer such that the second gas sprayer covers the susceptors.

8. The thin film deposition system as set forth in claim 6, wherein at least one through hole is formed through a portion of the support adjacent to the susceptors.

9. The thin film deposition system as set forth in claim 2, wherein a plurality of the second gas sprayers have the same shapes as those of the susceptors and sizes sufficient for respectively covering the substrates, are located at positions corresponding to the susceptors, and spray purge gas.

10. The thin film deposition system as set forth in claim 2, wherein second jet orifices are formed through the lower portion of each of the second gas sprayers such that the second jet orifices are spaced from each other by the same interval and form a spiral or lattice shape.

11. The thin film deposition system as set forth in claim 2, wherein the number of the susceptors in the reaction chamber is plural, and the number of the second gas sprayers is plural such that the second gas sprayers respectively correspond to the susceptors.

12. The thin film deposition system as set forth in claim 2, wherein the gas spraying speed of the second gas sprayer is higher than the gas spraying speed of the first gas sprayer.

13. The thin film deposition system as set forth in claim 1, further comprising a gas outlet for exhausting the gases in the reaction chamber to the outside.

14. A thin film deposition system comprising:

a reaction chamber;

at least one susceptor installed in the reaction chamber for mounting a substrate thereon;

a first gas sprayer rotatably located above the susceptor; and

at least one second gas sprayer installed above the first gas sprayer for spraying purge gas.

15. The thin film deposition system as set forth in claim 14, wherein:

source gas and reaction gas are supplied along a central shaft of the first gas sprayer; and

the first gas sprayer includes at least one source gas sprayer extended towards the inner wall of the reaction chamber for spraying the source gas, and at least one reaction gas sprayer extended towards the inner wall of the reaction chamber for spraying the reaction gas.

16. A thin film deposition method comprising:

preparing a thin film deposition system including a reaction chamber, at least one susceptor installed in the reaction chamber for mounting a substrate thereon, a first gas sprayer rotatably located above the susceptor, and at least one accelerating means located at a position corresponding to the susceptor for vertically accelerating gases supplied from the first gas sprayer;

mounting the substrate on the susceptor in the reaction chamber;

spraying source gas and reaction gas onto the substrate through the rotated first gas sprayer; and

spraying purge gas onto the substrate through the accelerating means.

17. The thin film deposition method as set forth in claim 16, wherein the source gas, the reaction gas, and the purge gas are simultaneously sprayed.

18. A thin film deposition method comprising:

preparing a thin film deposition system including a reaction chamber, at least one susceptor installed in the reaction chamber for mounting a substrate thereon, a first gas sprayer rotatably located above the susceptor, and at least one second gas sprayer installed above the first gas sprayer for spraying purge gas;

mounting the substrate on the susceptor in the reaction chamber;

spraying source gas and reaction gas onto the substrate through the rotated first gas sprayer; and

spraying purge gas onto the substrate through the second gas sprayer.