Method and system of dry cleaning a processing chamber

• US 20050241669A1
• Filed: 04/29/2004
• Published: 11/03/2005
• Est. Priority Date: 04/29/2004
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Wodecki, Norman
• Application Number:
  US10/834,370
• Publication Number:
  US 20050241669A1
• Time in Patent Office: Days
• US Class Current: 134/1.100
• CPC Class Codes: B08B 7/0035 by radiant energy, e.g. UV, laser, light beam or the like
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01J 37/32963 End-point detection

Abstract

A method of dry cleaning a plasma processing system is described, wherein the formation of particulate during dry cleaning is substantially minimized. In one embodiment, the dry cleaning process is adjusted in order to substantially reduce spatial variations of the dry cleaning rate within the plasma processing system. In another embodiment, endpoint detection is utilized to determine the completion of the dry cleaning process in order to avoid excessive ion sputtering of the underlying process chamber components.

Claims

1. A method of dry cleaning a plasma processing system comprising:

selecting a dry cleaning process recipe for substantially reducing particulate contamination during said dry cleaning of said plasma processing system, wherein said dry cleaning process recipe comprises setting at least one of a mass flow rate of a process gas, a pressure for said dry cleaning process, and a power for forming a plasma from said process gas; and

executing said dry cleaning process recipe in said plasma processing system to facilitate said dry cleaning.

2. The method of claim 1, further comprising selecting a dry cleaning process recipe for substantially reducing variations of dry cleaning rates in said plasma processing system.

3. The method of claim 1, further comprising terminating said dry cleaning process following a detection of an endpoint of said dry cleaning process.

4. The method of claim 1, further comprising terminating said dry cleaning process following an over clean time period extending beyond a detection of an endpoint of said dry cleaning process.

5. The method of claim 3, wherein said terminating said dry cleaning process following said detection of said endpoint comprises using optical emission spectroscopy.

6. The method of claim 1, wherein said setting said pressure comprises setting said pressure at a value less than or equal to 100 mTorr.

7. The method of claim 1, wherein said setting said mass flow rate of said process gas comprises setting a mass flow rate of oxygen (O₂).

8. The method of claim 1, wherein said selecting said dry cleaning process recipe comprises performing a design of experiment.

9. The method of claim 1, wherein said selecting said dry cleaning process recipe comprises substantially reducing particles of 0.5 micron and larger.

10. The method of claim 9, wherein said substantially reducing particles of 0.5 micron and larger comprises reducing the number of said particles to less than or equal to 10 particles per substrate.

11. The method of claim 1, further comprising monitoring a particle concentration in said plasma processing system.

12. The method of claim 11, further comprising adjusting said process recipe according to said particle concentration.

13. The method of claim 11, wherein said monitoring said particle concentration includes using laser scatterometry.

14. The method of claim 1, further comprising monitoring a cleaning rate uniformity in said plasma processing system.

15. The method of claim 14, further comprising adjusting said process recipe according to said cleaning rate uniformity.

16. A plasma processing system for processing a substrate comprising:

a process chamber;

a substrate holder coupled to said process chamber and configured to support said substrate;

a gas injection system coupled to said process chamber and configured to introduce a cleaning gas;

a plasma source coupled to said process chamber and configure to form plasma from said cleaning gas; and

a controller coupled to said process chamber and configured to execute a process recipe for dry cleaning said processing system periodically, wherein said process recipe substantially minimizes particulate formation during said dry cleaning.

17. The plasma processing system of claim 16, further comprising a diagnostic system coupled to said process chamber and said controller configured to perform at least one of monitoring light emission from said plasma processing system, monitoring particle concentrations in said plasma processing system, and monitoring a thickness of a film on an interior surface of said plasma processing system.

18. A method of optimizing a dry cleaning process in a plasma processing system, comprising:

performing a dry cleaning process in said plasma processing system, wherein said dry cleaning process comprises introducing a process gas having oxygen, setting a pressure in said plasma processing system, and igniting a plasma from said process gas;

determining a first cleaning rate at a first location;

determining a second cleaning rate at a second location; and

adjusting said dry cleaning process in order to minimize a difference between said first cleaning rate and said second cleaning rate.

19. The method of claim 18, wherein said determining said first cleaning rate and said second cleaning rate includes installing a first test specimen at said first location prior to performing said dry cleaning process, installing a second test specimen at said second location prior to said performing said dry cleaning process, removing said first test specimen following said dry cleaning process, measuring a thickness of a film on said first test specimen, removing said second test specimen following said dry cleaning process, and measuring a thickness of a film on said second test specimen.

20. The method of claim 18, wherein said determining said first cleaning rate and said second cleaning rate includes utilizing an in-situ thin film interferometer.