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Optical devices featuring textured semiconductor layers

  • US 20050242364A1
  • Filed: 04/15/2005
  • Published: 11/03/2005
  • Est. Priority Date: 04/15/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device for use as an optical sensor, solar cell or emitter, the device comprising:

  • a substrate, the substrate comprising a material selected from the group consisting of sapphire, silicon carbide, zinc oxide, silicon, gallium arsenide, gallium nitride, aluminum nitride and aluminum gallium nitride;

    a first layer on said substrate comprising of III-V material, wherein a surface of the first layer has a textured topology; and

    one or more quantum well layers alternating with barrier layers and textured by the surface of the first layer, the barrier layers comprising III-V material and the quantum well layers comprising III-V material.

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