High density data storage device having eraseable bit cells
First Claim
1. A data storage device, comprising:
- a media, including a phase change layer;
a tip positioned in proximity to the media such that a current can flow between the tip and the media; and
a bit cell formed by the tip within a portion of the media, the bit cell including a plurality of overlapping crystalline domains;
wherein the bit cell is formed by applying the current to the portion while repositioning the tip across the bit cell.
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Accused Products
Abstract
Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.
111 Citations
57 Claims
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1. A data storage device, comprising:
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a media, including a phase change layer;
a tip positioned in proximity to the media such that a current can flow between the tip and the media; and
a bit cell formed by the tip within a portion of the media, the bit cell including a plurality of overlapping crystalline domains;
wherein the bit cell is formed by applying the current to the portion while repositioning the tip across the bit cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 50, 51)
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9. A data storage device, comprising:
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a media including a phase change material;
a tip positioned in proximity to the media such that a current can flow between the tip and the media;
a bit cell formed within the media;
wherein the bit cell is formed by;
passing a first current through the tip and the media such that a first portion of the media is heated to at least a crystallization temperature;
allowing the first portion to cool such that the first portion is substantially crystalline in structure;
passing a second current through the tip and the media such that a second portion of the media is heated to at least a crystallization temperature, the second portion partially overlapping the first portion; and
allowing the second portion to cool such that the second portion is substantially crystalline in structure.
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10. A data storage device, comprising:
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a media a phase change layer;
a tip positioned in proximity to the media such that a current can flow between the tip and the media; and
a plurality of bit cells formed within the media, the plurality of bit cells including one of a “
0”
bit and a “
1”
bit;
wherein a bit cell including the “
0”
bit comprises a plurality of overlapping domains such that the a substantial portion of the bit cell has a first resistivity, the first resistivity corresponding to a substantially crystalline structure;
wherein a bit cell including the “
1”
bit comprises one or more domains such that a at least a portion of the bit cell has a second resistivity, the second resistivity corresponding to a substantially amorphous structure;
wherein each domain is formed by applying the current to a portion of the media and allowing the portion to cool such that one of a desired resistivity and a desired range of resistivity is achieved. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A data storage device, comprising:
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a media including;
a conductive under-layer; and
a phase change material;
a tip positioned in proximity to the media so that a current can flow between the tip and the media;
a bit cell formed within the media;
wherein the bit cell is formed by;
passing the current through the media so that a first portion of the media is heated to at least a crystallization temperature;
allowing the first portion to cool so that the first portion is substantially crystalline in structure;
passing the current through the media so that a second portion of the media is heated to at least a crystallization temperature, the second portion partially overlapping the first portion;
allowing the second portion to cool so that the second portion is substantially crystalline in structure.
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19. A data storage device, comprising:
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a media including a phase change layer;
a tip positioned in proximity to the media so that a current can flow between the tip and the media;
a bit cell formed within the media, the bit cell having;
a leading edge;
a trailing edge; and
an amorphous structure;
wherein the bit cell is erased by;
moving the tip across the bit cell from the leading edge to the trailing edge;
passing the current through the media so that the bit cell is heated to at least a crystallization temperature;
allowing the bit cell to cool so that the phase change layer of the bit cell is substantially crystalline in structure.
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20. A data storage device, comprising:
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a media including a phase change layer;
a tip positioned in proximity to the media so that a current can flow between the tip and the media;
a bit cell formed within the media, the bit cell having;
a leading edge;
a trailing edge; and
an amorphous structure;
wherein the bit cell is erased by;
passing the current through the media so that a portion of the leading edge is heated to one of at least a crystallization temperature;
moving the tip across the bit cell from the leading edge to the trailing edge so that a heat wave front moves from the leading edge to the trailing edge; and
allowing the bit cell to cool so that the bit cell is substantially crystalline in structure. - View Dependent Claims (21, 22, 23, 24, 25)
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26. A data storage device, comprising:
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a media including a phase change layer;
a tip positioned in proximity to the media so that a current can flow between the tip and the media;
a bit cell formed within the media, the bit cell having;
a leading edge;
a trailing edge; and
an amorphous structure;
wherein the bit cell is erased by;
passing the current through the media so that a portion of the leading edge is heated to a crystallization temperature;
forming a nucleation site at the portion;
moving the tip across the bit cell from the leading edge to the trailing edge so that the nucleation site propagates from the leading edge to the trailing edge; and
allowing the bit cell to cool so that the bit cell is substantially crystalline in structure. - View Dependent Claims (27, 28, 29, 30, 31)
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32. A data storage device, comprising:
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a media including a phase change layer;
a tip positioned in proximity to the media so that a current can flow between the tip and the media;
a bit cell formed within the media, the bit cell having;
a first edge;
a second edge; and
an amorphous structure;
wherein the bit cell is erased by;
passing the current through the media so that a portion of the first edge is heated to a crystallization temperature;
forming a nucleation site at the portion;
moving the tip across the bit cell from the first edge to the second edge so that a heat wave front moves from the first edge to the second edge; and
allowing the bit cell to cool so that the bit cell is substantially crystalline in structure. - View Dependent Claims (33, 34, 35, 36, 37)
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38. A data storage device, comprising:
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a media including a phase change layer;
a tip positioned in proximity to the media so that a current can flow between the tip and the media;
a bit cell formed within the media, the bit cell having;
a first edge;
a second edge; and
an amorphous structure;
wherein the bit cell is erased by;
passing the current through the media so that a portion of the first edge is heated to a crystallization temperature;
cooling the portion of the first edge so that a crystal forms;
moving the tip across the target bit cell from the first edge to the second edge of the target bit cell so that the crystal is pulled from the first edge to the second edge; and
allowing the bit cell to cool so that the bit cell is substantially crystalline in structure. - View Dependent Claims (39, 40, 41, 42, 43)
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44. A data storage device, comprising:
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a media including a phase change layer;
a tip positioned in proximity to the media so that a current can flow between the tip and the media;
a bit cell formed within the media, the bit cell having;
a first edge;
a second edge; and
an amorphous structure;
wherein the bit cell is erased by;
passing the current through the media so that a portion of the first edge is heated to a crystallization temperature;
moving the tip across the bit cell from the first edge to the second edge of the bit cell so that a heat wave front moves from the first edge to the second edge; and
allowing the bit cell to cool so that the bit cell is substantially crystalline in structure. - View Dependent Claims (45, 46, 47, 48, 49)
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52. A data storage device, comprising:
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a media including a phase change layer;
a tip positioned in proximity to the media so that a current can flow between the tip and the media;
a bit cell formed within the media, the bit cell having;
a first edge;
a second edge; and
a crystalline structure;
wherein the bit cell is erased by;
passing the current through the media so that a portion of the first edge is heated to at least a threshold temperature;
moving the tip across the bit cell from the first edge to the second edge; and
quenching the bit cell to cool so that the bit cell is substantially amorphous in structure. - View Dependent Claims (53, 54, 55, 56, 57)
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Specification