Porous silicon filter for wavelength multiplexing or de-multiplexing

• US 20050244098A1
• Filed: 06/29/2005
• Published: 11/03/2005
• Est. Priority Date: 10/02/2003
• Status: Active Grant

• Current Assignee: Crossfiber Inc., Iande Group, LLC
• Original Assignee: Todd Barrett
• Inventors: Barrett, Todd
• Granted Patent: US 7,177,497 B2
• Time in Patent Office: Days
• US Class Current: 385/17
• CPC Class Codes: G02B 6/29365 in a multireflection configuration, i.e. beam following a zigzag path between filters or filtering operations
• CPC Class Codes: G02B 6/29367 Zigzag path within a transparent optical block, e.g. filter deposited on an etalon, glass plate, wedge acting as a stable spacer
• CPC Class Codes: G02B 6/3518 the reflective optical element being an intrinsic part of a MEMS device, i.e. fabricated together with the MEMS device MEMS devices in general B81B; manufacture of MEM devices in general B81C; micromechanical devices controlling the direction of light G02B26/0833
• CPC Class Codes: G02B 6/3556 NxM switch, i.e. regular arrays of switches elements of matrix type constellation
• CPC Class Codes: G02B 6/356 in an optical cross-connect device, e.g. routing and switching aspects of interconnecting different paths propagating different wavelengths to (re)configure the various input and output links switching polarized beams G02B6/3594; power equalizers G02B6/356 and G02B6/3594; path selecting means H04Q11/0001
• CPC Class Codes: G02B 6/357 Electrostatic force electrostatic forces controlling reflecting elements in general G02B26/0841
• CPC Class Codes: G02B 6/3584 constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching MEMS per se B81B, B81C
• CPC Class Codes: G02B 6/3588 of the processed beams, i.e. controlling during switching of orientation, alignment, or beam propagation properties such as intensity, size or shape
• CPC Class Codes: G02F 1/011 in optical waveguides, not otherwise provided for in this subclass
• CPC Class Codes: G02F 1/0115 in optical fibres
• CPC Class Codes: G02F 1/1326 Liquid crystal optical waveguides or liquid crystal cells specially adapted for gating or modulating between optical waveguides
• CPC Class Codes: G02F 2201/307 Reflective grating, i.e. Bragg grating
• CPC Class Codes: G02F 2203/055 wavelength filtering

Abstract

A porous silicon filter for wavelength multiplexing and de-multiplexing. Preferred embodiments include rugate-type porous silicon filters with pores having continuously varying widths with pore depth an optical cross connect switch. In other preferred embodiments, the pores are filled with a material that changes index of refraction with changes in applied voltage, current or temperature. Important applications of these porous silicon filters are for multiplexing and de-multiplexing in fiber optic communication systems. For example, a preferred embodiment is an all optical fiber optic switch utilizing these filters.

Claims

1. A porous silicon optical filter for wavelength multiplexing or de-multiplexing comprising a silicon substrate in which a very large number of tiny pores are etched to define a plurality of layers having porosities, pore thicknesses and indexes of refraction representing approximately one-forth of a wavelength of light at a particular frequency or a particular narrow band of frequencies.

2. The filter as in claim 1 wherein said very large number of tiny pores also defines at least one layer having a porosities, pore thickness and index of refraction representing approximately one-half of a wavelength of light at said particular frequency or said particular narrow band range of frequencies.

3. The filter as in claim 2 wherein said at least one layer is a plurality of layers.

4. The filter as in claim 1 wherein at least some of said plurality of layers are formed of holes with continuously varying widths to provide a rugate-type optical filter.

5. The filter as in claim 1 wherein at least some of said holes are at least partially filed with a material having a controllable index of refraction.

6. The filter as in claim 5 wherein said material is an electro-optical material and also comprising an electrical control source for controlling the indexes of refraction in at least some of the layers.

7. The filter as in claim 6 wherein said control of the indexes of refraction is provided by adjusting electric current applied to said layers.

8. The filter as in claim 6 wherein said control of the indexes of refraction is provided by adjusting electric voltage applied to said layers.

9. The filter as in claim 5 wherein said material is an thermo-optical material and also comprising an heat source for controlling the indexes of refraction in at least some of the layers.

12. The switch as in claim 1 wherein said at least one layer is a plurality of layers.

10. An optical fiber optic cross-connect switch for cross connecting optical fibers in an input set of optical fibers to fibers in an output set of fibers utilizing alignment beams that are co-axial with the communication beams transmitted through said optical fibers, such switch comprising:

A) an alignment beam insertion means for aligning an alignment beam co-axially with the communication beam carried by each fiber in the input set of optical fibers to define a communication-alignment beam for each fiber,

B) an input array structure,

C) a first network of confined optical pathways for directing each communication-alignment beam to a specific exit aperture in said input array structure, said exit apertures for all of the communication-alignment beams being arranged in a pattern defining an input array such that each communication-alignment beam can be identified by the location of its exit aperture in the input array structure,

D) an output array structure,

E) a second network of confined optical pathways for directing the communication beam portion of each cross connection beam to a specific exit aperture in said output array structure, each confined optical pathway defining an entrance aperture said entrance apertures for all of the pathways being arranged in a pattern defining an output array such that each pathway can be identified by the location of its entrance aperture in the output array structure,

F) a first lens array for forming each communication-alignment beam into a cross-connection beam,

G) a second lens array for focusing the communication portion of the cross connection beam into the entrance apertures of the second network of confined optical pathways

H) a first mirror array and a second mirror array, said first mirror array having a plurality of mirrors with each mirror positioned to intercept one of the cross connection beams and direct it to a mirror in the second mirror array and said second mirror array having a plurality of mirrors with each mirror positioned to intercept one of the cross connection beams and direct it to a micro lens in said second lens array,

I) a first detector array positioned to monitor at least a portion of each of the alignment beam portion of each cross connection beam, and

J) at least one processor programmed to control positions of the mirrors in the first and second mirror arrays based at least in part on beam direction information provided by said first detector array.

K) a plurality of porous silicon optical filters for wavelength multiplexing or de-multiplexing comprising a silicon substrate in which a very large number of tiny holes are etched to define a plurality of layers having thicknesses and indexes of refraction representing approximately one-forth of a wavelength of light at a particular frequency or a particular narrow band of frequencies.

11. The switch as in claim 10 wherein said very large number of tiny holes also define at least one layer having a thickness and index of refraction representing approximately one-half of a wavelength of light at said particular frequency or said particular narrow band range of frequencies.

13. The switch as in claim 10 wherein at least some of said plurality of layers are formed of holes with continuously varying widths to provide a rugate-type optical filter.

14. The switch as in claim 10 wherein at least some of said holes are at least partially filed with a material having a controllable index of refraction.

15. The switch as in claim 14 wherein said material is an electro-optical material and also comprising an electrical control source for controlling the indexes of refraction in at least some of the layers.

16. The switch as in claim 15 wherein said control of the indexes of refraction is provided by adjusting electric current applied to said layers.

17. The switch as in claim 16 wherein said control of the indexes of refraction is provided by adjusting electric voltage applied to said layers.

18. The switch as in claim 15 wherein said material is an thermo-optical material and also comprising an heat source for controlling the indexes of refraction in at least some of the layers.

19. A switch as in claim 10 wherein said second detector array is transparent to said communication beam portions of said cross connection beams, permitting alignment beam detection while allowing the communication beams to pass through the detector array to the input apertures of the confined pathways in the output array structure.

20. A switch as in claim 10 wherein the first and second network of confined optical pathways are a first and second network of optical fibers.

21. A switch as in claim 20 and also comprising at least two arrays of ferrules for precisely arranging said first and second network of optical fibers.

22. A switch as in claim 10 wherein said first array is a first micro-lens array and said second lens arrays is a second micro-lens array.

23. A switch as in claim 10 wherein said first mirror array is a first MEMS mirror array and said second mirror array is a second MEMS array.

24. A switch as in claim 10 wherein said first detector array is transparent to the communication beam permitting alignment beams detection while allowing the communication beams to pass through the detector array to the input apertures of the confined pathways in the output array structure.

25. A switch as in claim 10 and further comprising as second detector array and a beam splitter located optically between the first and second mirror arrays and positioned to direct a portion of each alignment beam of the cross connection beam to said first detector array,

27. A switch as in claim 10 wherein said input set of optical fibers and said output set of optical fibers are each at least 16 optical fibers.

28. A switch as in claim 10 wherein said input set of optical fibers and said output set of optical fibers are each at least 256 optical fibers.

29. A switch as in claim 10 wherein said switch is configured to operate as a cross connect switch in a national scale network.

30. A switch as in claim 10 wherein said switch is configured to operate as a part of a ROADM unit.

31. A switch as in claim 10 wherein said switch is configured to operate as a part of an intra-office or intra-factory communication system.

32. A switch as in claim 23 wherein each of said MEMS mirrors in said first and second mirror arrays comprises a mirror element fabricated in a silicon wafer and mirror controls fabricated in a silicon wafer.

33. A switch as in claim 32 wherein said mirror controls comprise four electrodes producing electrostatic forces to control mirror position in said mirror.

34. A switch as in claim 32 wherein each of said electrodes define a top surface located directly under said mirror element and a bottom surface wherein electric power for said electrodes is provided through the bottom surface of said electrode.

26. A switch as in claim 26 and further comprising a second processor programmed to control positions of the mirrors in the first mirror arrays based at least in part on beam direction information provided by said second detector array.