Methods for producing a light emitting semiconductor body with a liminescence converter element

• US 20050244993A1
• Filed: 03/02/2001
• Published: 11/03/2005
• Est. Priority Date: 03/03/2000
• Status: Active Grant

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Bogner, Georg, Debray, Alexandra, Waitl, Gunther
• Granted Patent: US 7,601,550 B2
• Time in Patent Office: Days
• US Class Current: 438/22
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder

Abstract

The invention describes two methods of fabricating semiconductor components in which a luminescence conversion element is applied directly to the semiconductor body (1). In the first method, a suspension (4) containing a bonding agent and at least one luminescent material (5) is applied to the semiconductor body (1) in layers. In the next step the solvent escapes, leaving only the luminescent material (5) with the bonding agent on the semiconductor body.

In the second method, the semiconductor body (1) is provided with a layer (6) of bonding agent to which the luminescent material (5) is applied directly.

Claims

1. A method for fabricating a light-radiating semiconductor component that includes an electrically contacted semiconductor body (1), mounted on a substrate element (2), and a luminescence conversion element, and that comprises at least one luminescent material (5) and is deposited on said semiconductor body (1), characterized by the steps of

fabricating said semiconductor body (1), mounting on said substrate element (2) and electrical contacting,

applying in layers, to at least one surface of said semiconductor body (1), a suspension (4) that contains butyl acetate as solvent and into which at least one bonding agent and said at least one luminescent material (5) are introduced,

drying the semiconductor component, leaving essentially said luminescent material (5) on said semiconductor body (1).

5. The method of any of claims 1 to 4, characterized in that inorganic phosphors, Ce- or Tb-activated garnets, alkaline earth sulfides or organic dyes are used as said luminescent material (5).

6. The method of any of claims 1 to 5, characterized in that said luminescent material (5) contains YAG:

Ce, ThYAG;

Ce, GdYAG;

Ce, GdThYAG;

Ce or mixtures based thereon, Al optionally being replaced at least partially by Ga or In.

7. The method of any of claims 1 to 6, characterized in that the average grain size of said at least one luminescent material (5) is 10 μ

m.

8. The method of any of claims 1 to 7, characterized by casting of the component in epoxy resin or acrylic resin.

9. The method of any of claims 1 to 8, characterized in that the central wavelength of the radiation emitted by said semiconductor body (1) during operation is less than 460 nm.

10. The method of any of claims 1 to 9, characterized in that the color of the radiation emitted by said semiconductor body (1) during operation and the color of the light emitted by said at least one luminescent material are mutually complementary, thereby producing the effect of white light.

11. The use of a plurality of components fabricated according to any of claims 1 to 10 in an LED lighting unit.

12. The use of a plurality of components fabricated according to any of claims 1 to 10 in an LED lighting unit, in which the components fabricated according to any of claims 1 to 10 are in a matrix type of arrangement.

13. The use of a component fabricated according to any of claims 1 to 10 as a light source in an imaging optics.

2. A method for fabricating a light-radiating semiconductor component that includes an electrically contacted semiconductor body (1), mounted on a substrate element (2), and a luminescence conversion element, and that comprises at least one luminescent material (5) and is deposited on said semiconductor body (1), characterized by the steps of

fabricating said semiconductor body (1), mounting on said substrate element (2) and electrical contacting,

applying a layer (6) of bonding agent to at least one surface of said semiconductor body,

applying said least one luminescent material (5) to said at least one surface of said semiconductor body.

3. The method of claim 2, characterized in that epoxy resin, acrylic resin or silicone is used as the bonding agent (6).

4. The method of claim 2 or 3, characterized in that said at least one luminescent material (5) is scattered, blown or dusted on.