Method for smoothing a film of material using a ring structure

• US 20050247668A1
• Filed: 05/06/2004
• Published: 11/10/2005
• Est. Priority Date: 05/06/2004
• Status: Abandoned Application

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J., Malik, Igor J., Kirk, Harry R.
• Application Number:
  US10/841,253
• Publication Number:
  US 20050247668A1
• Time in Patent Office: Days
• US Class Current: 216/58
• CPC Class Codes: H01L 21/30625 With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

A method for treating a surface region having a surface roughness, e.g., 0.3-30 nm rms. The method includes providing a substrate, which has a surface region, a thickness of material, and a backside surface. The surface region is characterized by a first predetermined surface roughness value. The thickness of material is defined between the surface region and the backside surface. The method includes maintaining the substrate on a susceptor from the backside surface to hold the substrate in place within a treatment chamber. The method includes maintaining the surface region within an annular region, which is substantially a similar height as the surface region. The annular region has a width surrounding the surface region. The method introduces hydrogen gas into the treatment chamber and introduces an etchant gas into the treatment chamber. The method exposes the surface region having the first predetermined surface roughness value and the width of the annular region to at least the hydrogen gas and the etchant gas. The method reduces the predetermined surface roughness value from the predetermined surface roughness value to a second predetermined surface roughness value from a first edge of the substrate to a second edge of the substrate along the surface region, whereupon the reducing occurs substantially evenly across the first edge of the substrate to the second edge of the substrate.

Claims

1. A method for treating a surface region having a surface roughness, the method comprising:

providing a substrate having a surface region, a thickness of material, and a backside surface, the surface region being characterized by a first predetermined surface roughness value, the thickness of material being defined between the surface region and the backside surface;

maintaining the substrate on a susceptor from the backside surface to hold the substrate in place within a treatment chamber;

maintaining the surface region within an annular region, the annular region being at substantially a similar height as the surface region, the annular region having a width surrounding the surface region;

introducing hydrogen gas into the treatment chamber;

introducing HCl gas into the treatment chamber;

exposing the surface region having the first predetermined surface roughness value and the width of the annular region to at least the hydrogen gas and the HCl gas; and

reducing the predetermined surface roughness value from the predetermined surface roughness value to a second predetermined surface roughness value from a first edge region of the substrate to a second edge region of the substrate along the surface region, whereupon the reducing occurs substantially evenly across the first edge region of the substrate to the second edge region of the substrate.

2. The method of claim 1 wherein the substrate comprises a silicon wafer.

3. The method of claim 1 wherein the annular region is a ring structure.

4. The method of claim 1 wherein the width ranges from about 1 to about 10 centimeters.

5. The method of claim 1 wherein the annular region is made of a first material and the substrate is made of a second material, the first material being similar to the second material.

6. The method of claim 1 wherein the substrate is made of silicon and the annular region is made of silicon.

7. The method of claim 1 wherein the annular region comprises a silicon ring structure.

8. The method of claim 1 wherein the annular region evenly distributes the hydrogen gas and the HCl gas along the surface region from the first edge of the substrate to the second edge of the substrate.

9. The method of claim 8 wherein the annular region reduces a fringe influence within a perimeter of the substrate, the perimeter being defined by the first edge and the second edge.

10. The method of claim 1 wherein the surface region comprises materials selected from silicon, germanium, silicon germanium alloy, and silicon germanium carbon alloy.

11. A method for treating a surface region having a surface roughness, the method comprising:

providing a substrate having a surface region, a thickness of material, and a backside surface, the surface region being characterized by a first predetermined surface roughness value, the thickness of material being defined between the surface region and the backside surface;

maintaining the substrate on a susceptor from the backside surface to hold the substrate in place within a treatment chamber;

maintaining the surface region within an annular region, the annular region being at substantially a similar height as the surface region, the annular region having a width surrounding the surface region;

introducing hydrogen gas into the treatment chamber;

introducing an etchant gas into the treatment chamber;

exposing the surface region having the first predetermined surface roughness value and the width of the annular region to at least the hydrogen gas and the etchant gas; and

reducing the predetermined surface roughness value from the predetermined surface roughness value to a second predetermined surface roughness value from a first edge of the substrate to a second edge of the substrate along the surface region, whereupon the reducing occurs substantially evenly across the first edge of the substrate to the second edge of the substrate.

12. The method of claim 11 wherein the substrate comprises a silicon wafer.

13. The method of claim 11 wherein the annular region is a ring structure.

14. The method of claim 11 wherein the width ranges from about 1 to about 3 centimeters.

15. The method of claim 11 wherein the annular region is made of a first material and the substrate is made of a second material, the first material being similar to the second material.

16. The method of claim 11 wherein the substrate is made of silicon and the annular region is made of silicon.

17. The method of claim 11 wherein the annular region comprises a silicon ring structure.

18. The method of claim 11 wherein the annular region evenly distributes the hydrogen gas and the etchant gas along the surface region from the first edge of the substrate to the second edge of the substrate.

19. The method of claim 18 wherein the annular region reduces a fringe influence within a perimeter of the substrate, the perimeter being defined by the first edge and the second edge.

20. The method of claim 11 wherein the surface region comprises materials selected from silicon, germanium, silicon germanium, strained silicon, and group III/IV materials.