Method of dry etching, dry etching gas and process for producing perfluoro-2-pentyne
First Claim
1. A dry etching method characterized in that a resist film formed on a substrate is irradiated with radiation having a wavelength of not more than 195 nm to form a resist pattern having a minimum line width of not more than 200 nm, and the substrate having the resist pattern formed thereon is subjected to dry etching using a fluorine-containing compound having 4 to 6 carbon atoms and at least one unsaturated bond as an etching gas.
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Abstract
A dry etching method wherein a resist film is irradiated with radiation having a wavelength of not more than 195 nm to form a resist pattern having a minimum line width of not more than 200 nm, and the substrate having the resist pattern formed thereon is subjected to dry etching using a fluorine-containing compound having 4 to 6 carbon atoms and at least one unsaturated bond as an etching gas. As the fluorine-containing compound, perfuloro-2-pentyne, perfuloro-2-butyne, nonafluoro-2-pentene and perfluoro-2-pentene are preferably used. Perfuloro-2-pentyne is produced by a process wherein a 1,1,1-trihalo-2,2,2-trifluoroethane is allowed to react with pentafluoropropionaldehyde to give a 2-halo-1,1,1,4,4,5,5,5-octafluoro-2-pentene, and the thus-produced halo-octafluoro-2-pentene is dehydrohalogenated.
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Citations
12 Claims
- 1. A dry etching method characterized in that a resist film formed on a substrate is irradiated with radiation having a wavelength of not more than 195 nm to form a resist pattern having a minimum line width of not more than 200 nm, and the substrate having the resist pattern formed thereon is subjected to dry etching using a fluorine-containing compound having 4 to 6 carbon atoms and at least one unsaturated bond as an etching gas.
- 7. A dry etching gas comprised of a fluorine-containing compound having 4 to 6 carbon atoms and at least one unsaturated bond, and used for dry etching for a resist film forming a resist pattern having a minimum line width of not more than 200 nm at irradiation with radiation having a wavelength of not more than 195 nm.
- 11. A process for producing perfluoro-2-pentyne characterized in that a 1,1,1-trihalo-2,2,2-trifluoroethane is allowed to react with pentafluoropropionaldehyde to give a 2-halo-1,1,1,4,4,5,5,5-octafluoro-2-pentene, and the thus-produced 2-halo-1,1,1,4,4,5,5,5-octafluoro-2-pentene is dehyrohalogenated.
Specification