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Method of dry etching, dry etching gas and process for producing perfluoro-2-pentyne

  • US 20050247670A1
  • Filed: 07/16/2003
  • Published: 11/10/2005
  • Est. Priority Date: 07/17/2002
  • Status: Abandoned Application
First Claim
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1. A dry etching method characterized in that a resist film formed on a substrate is irradiated with radiation having a wavelength of not more than 195 nm to form a resist pattern having a minimum line width of not more than 200 nm, and the substrate having the resist pattern formed thereon is subjected to dry etching using a fluorine-containing compound having 4 to 6 carbon atoms and at least one unsaturated bond as an etching gas.

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