Method for securing electronic components to a substrate

• US 20050247760A1
• Filed: 04/22/2005
• Published: 11/10/2005
• Est. Priority Date: 04/22/2004
• Status: Active Grant

• Current Assignee: Semikron Elektronik GmbH & Company KG (Heilbronner Holding GbR)
• Original Assignee: Semikron Elektronik GmbH & Company KG (Heilbronner Holding GbR)
• Inventors: Palm, Gerhard
• Granted Patent: US 8,662,377 B2
• Time in Patent Office: Days
• US Class Current: 228/193
• CPC Class Codes: B22F 2998/00 Supplementary information concerning processes or compositions relating to powder metallurgy
• CPC Class Codes: B22F 7/064 using an intermediate powder layer
• CPC Class Codes: B23K 35/025 Pastes, creams, slurries
• CPC Class Codes: B23K 35/3006 Ag as the principal constituent
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/37099 Material
• CPC Class Codes: H01L 2224/83005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/83191 wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83201 Compression bonding
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/27 Manufacturing methods
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/33 of a plurality of layer connectors
• CPC Class Codes: H01L 24/36 Structure, shape, material or disposition of the strap connectors prior to the connecting process
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H05K 2201/10984 : Component carrying a connection agent, e.g. solder, adhesive soldering leadless components having an array of bottom contacts H05K3/3436; BGA components H05K2201/10734
• CPC Class Codes: H05K 2203/0156 : Temporary polymeric carrier or foil, e.g. for processing or transferring
• CPC Class Codes: H05K 2203/0278 : Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
• CPC Class Codes: H05K 2203/0338 : Transferring metal or conductive material other than a circuit pattern, e.g. bump, solder, printed component affixing a prefabricated conductor pattern H05K3/20
• CPC Class Codes: H05K 2203/1131 : Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
• CPC Class Codes: H05K 3/321 : by conductive adhesives

Abstract

A method for securing electronic components, in particular power semiconductor components such as diodes, transistors or thyristors, and connection elements, to a substrate by pressure sintering. The method includes: applying a pastelike layer, made up of a metal powder and a solvent, to a supporting film; drying the pastelike layer; applying at least one component to the dried layer; subjecting the at least one component, the supporting film and the dried layer to pressure, as a result of which the adhesive force between the layer and the component becomes greater than that between the layer and the supporting film; lifting off the at least one component, with the layer adhering to it, from the supporting film; positioning the component, with the layer adhering to it, to the substrate; and subjecting the substrate and the component to pressure, for connecting them by sintering.

Claims

1. A method for securing electronic components to a substrate by means of pressure sintering, the method comprising:

a) applying a pastelike layer, comprising a metal powder and a solvent, to a supporting film;

b) drying said pastelike layer;

c) applying at least one electronic component to said dried layer;

d) subjecting said at least one electronic component, said supporting film and said dried layer to pressure, whereby the adhesive force between said dried layer and said component becomes greater than the adhesive force between said dried layer and said supporting film;

e) removing said at least one component, with said layer adhering thereto from said supporting film;

f) positioning said at least one component, with said layer adhering thereto, on said substrate and;

g) subjecting said substrate and said at least one component to pressure, thereby connecting them by sintering.

2. The method of claim 1, wherein said electronic components are power semiconductor components.

3. The method of claim 2, wherein said power semiconductor components include at least one of diodes, transistors and thyristors.

4. The method of claim 1, wherein said supporting film comprises a polyester film having a thickness of between approximately 100 μ

m and approximately 200 μ

m.

5. The method of claim 1, wherein said supporting film is intrinsically structured, to coat said component in structured form.

6. The method of claim 1, wherein said pastelike layer comprises a mixture of silver powder with cyclohexanol in a ratio of from approximately 1:

2 to approximately 1;

4, and a thickness of between approximately 10 μ

m and approximately 50 μ

m.

7. The method of claim 1, wherein said pastelike layer is dried at a temperature of between approximately 100°

C. and approximately 200°

C.

8. The method of claim 1, wherein said component, said supporting film and said pastelike layer are subjected to a pressure of between approximately 20 MPa and approximately 80 MPa for a period of from about 5 seconds to about 20 seconds.

9. The method of claim 8, wherein said component, said supporting film and said pastelike layer are subjected to a temperature of between approximately 40°

C. and approximately 100°

C. for a period of from about 5 seconds to about 20 seconds.

10. The method of claim 1, wherein a plurality of components are disposed on a carrier having a frame and an adhesive film, said carrier being dispensed on the sides of said components opposite said dried layer.

11. A method for securing a first electronic structure to a second electronic structure by pressure sintering, the method comprising:

a) applying a pastelike layer, comprising a metal powder and a solvent, to a first, structured supporting film;

b) drying said pastelike layer;

c) applying a second film, thinner than said first supporting film, to said dried layer;

d) subjecting said first supporting film, said dried layer and said second film to pressure, whereby the adhesive force between said dried layer and said second film becomes greater than the adhesive force between said dried layer and said supporting film;

e) removing said second film, with said dried layer adhering thereto, from said supporting film;

f) positioning individual metal chips, on at least one of said first and second electronic structures; and

g) subjecting said first and second electronic structures with metal chips disposed therebetween, to pressure, for mutually connecting them by sintering.

12. The method of claim 11, wherein said first electronic structure is an electronic component, and said second electronic structure is a substrate.

13. The method of claim 11, wherein said first electronic structure is a connection element and said second electronic structure is one of an electronic component and a substrate.

14. The method of claim 11, wherein said supporting film comprises a polyester film having a thickness of between approximately 100 μ

m and approximately 200 μ

m.

15. The method of claim 11, wherein said supporting film is intrinsically structured, to coat said component in structured form.

16. The method of claim 11, wherein said pastelike layer comprises a mixture of silver powder with cyclohexanol in a ratio of from approximately 1:

2 to approximately 1;

4, and having a thickness of between approximately 10 μ

m and approximately 50 μ

m.

17. The method of claim 11, wherein said pastelike layer is dried at a temperature of between approximately 100°

C. and approximately 200°

C.

18. The method of claim 11, wherein said second film includes a polyester film having a thickness of between approximately 10 μ

m and approximately 100 μ

m.

19. The method of claim 11, wherein said first supporting film, said dried layer and said second film are subjected to a pressure of between approximately 20 MPa and approximately 80 MPa for from about 5 seconds to about 20 seconds.

20. The method of claim 19, wherein said first supporting film, said dried layer and said second film are subjected to a temperature of between approximately 40°

C. and approximately 100°

C. for a period of from about 5 seconds to about 20 seconds.