Chip scale package with heat spreader

• US 20050248038A1
• Filed: 07/20/2005
• Published: 11/10/2005
• Est. Priority Date: 02/23/1998
• Status: Abandoned Application

• Current Assignee: David J. Corisis
• Original Assignee: David J. Corisis
• Inventors: Corisis, David J.
• Application Number:
  US11/185,364
• Publication Number:
  US 20050248038A1
• Time in Patent Office: Days
• US Class Current: 257/778
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2224/05026 the internal layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/06131 being uniform, i.e. having a uniform pitch across the array
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/812 Applying energy for connecting
• CPC Class Codes: H01L 2224/81201 Compression bonding
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/86 using tape automated bonding [TAB]
• CPC Class Codes: H01L 23/36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/49568 specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

A dense semiconductor flip-chip device assembly is provided with a heat sink/spreading/dissipating member which is formed as a paddle of a metallic paddle frame in a strip of paddle frames. Dice are bonded to the paddles by e.g. conventional die attach methods, enabling bump attachment and testing to be conducted before detachment from the paddle frame strip.

Claims

1. A semiconductor device assembly of a plurality of semiconductor device assemblies, comprising:

a semiconductor die having an active surface having a plurality of bond pads thereon and an opposing second surface;

at least one projection connected to at least one bond pad of the plurality of bond pads on the active surface of the semiconductor die for flip-chip bonding to a substrate, the at least one projection including one of at least one solder ball and at least one solder bump; and

a paddle frame of a plurality of paddle frames including a pair of side rails, a plurality of cross-members, and a plurality of generally centrally positioned paddles, the pair of side rails and the plurality of cross members connected to a generally centrally positioned paddle of the paddle frame by a plurality of paddle support bars, the second surface of the semiconductor die being secured to the paddle, the paddle being attached to the side rail by at least two of the plurality of paddle support bars and being attached to the cross members by at least two of the plurality of support bars.

2. The semiconductor device assembly of claim 1, further comprising:

an electrically conductive adhesive layer securing said second surface of said semiconductor die to said generally centrally positioned paddle.

3. The semiconductor device assembly of claim 2, wherein said electrically conductive adhesive layer comprises a eutectic material.

4. The semiconductor device assembly of claim 2, wherein said electrically conductive adhesive layer comprises a gold-silicon eutectic material.

5. The semiconductor device assembly of claim 2, wherein said electrically conductive adhesive layer comprises a metal-filled polymer, said metal filling comprising a heat conductive material.

6. The semiconductor device assembly of claim 2, wherein said electrically conductive adhesive layer comprises conductive polyimide.

7. The semiconductor device assembly of claim 2, wherein said electrically conductive adhesive layer comprises a eutectic material.

8. The semiconductor device assembly of claim 7, wherein said electrically conductive adhesive layer comprises a gold-silicon eutectic material.

9. The semiconductor device assembly of claim 2, wherein said electrically conductive adhesive layer comprises a metal-filled polymer, said metal filling comprising a heat conductor.

10. The semiconductor device assembly of claim 2, wherein said electrically conductive layer comprises conductive polyimide.

11. A semiconductor device assembly of a plurality of semiconductor device assemblies, comprising:

a semiconductor die having an active surface having at least one bond pad thereon and an opposing second surface;

at least one projection secured to the at least one bond pad on the active surface of said semiconductor die for a flip-chip connection to a substrate, the at least one projection including one of at least one solder ball and at least one solder bump; and

a metal paddle from a paddle frame having no narrow common electrical leads for connection to the semiconductor die of a plurality of paddle frames connected by a pair of rails having a plurality of cross members therebetween, said second surface of the semiconductor die being attached to the paddle, the metal paddle attached to at least one side rail by at least a plurality of paddle support bars and being attached to a plurality of cross members by the support bars, the paddle support bars not used for electrical leads for the semiconductor die.

12. The semiconductor device assembly of claim 11, further comprising:

an electrically conductive adhesive layer securing said second surface of said semiconductor die to said generally centrally positioned paddle.

13. The semiconductor device assembly of claim 12, wherein said electrically conductive adhesive layer comprises a eutectic material.

14. The semiconductor device assembly of claim 12, wherein said electrically conductive adhesive layer comprises a gold-silicon eutectic material.

15. The semiconductor device assembly of claim 12, wherein said electrically conductive adhesive layer comprises a metal-filled polymer, said metal filling comprising a heat conductive material.

16. The semiconductor device assembly of claim 12, wherein said electrically conductive adhesive layer comprises conductive polyimide.

17. The semiconductor device assembly of claim 12, wherein said electrically conductive adhesive layer comprises a eutectic material.

18. The semiconductor device assembly of claim 17, wherein said electrically conductive adhesive layer comprises a gold-silicon eutectic material.

19. The semiconductor device assembly of claim 12, wherein said electrically conductive adhesive layer comprises a metal-filled polymer, said metal filling comprising a heat conductor.

20. The semiconductor device assembly of claim 12, wherein said electrically conductive layer comprises conductive polyimide.