Method for the manufacturing of a capacitive pressure sensor, and a capacitive pressure sensor

• US 20050248905A1
• Filed: 04/26/2005
• Published: 11/10/2005
• Est. Priority Date: 05/03/2004
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: VTI Technologies Oy (Murata Manufacturing Co Limited)
• Inventors: Astrom, Riikka, Ruohio, Jaakko
• Granted Patent: US 7,252,007 B2
• Time in Patent Office: Days
• US Class Current: 361/283.400
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: Y10T 29/49 Method of mechanical manufacture

Abstract

The invention relates to measuring devices for the measuring of pressure, and more specifically to capacitive pressure sensors. The silicon crystal planes {111} are located at the corners of a wet etched membrane well of a pressure sensor element according to the present invention. An object of the invention is to provide an improved method of manufacturing a capacitive pressure sensor, and a capacitive pressure sensor suitable for use, in particular, in small capacitive pressure sensor solutions.

Claims

1. A method of manufacturing a capacitive pressure sensor out of a silicon wafer element, in which method

the silicon wafer is masked for wet etching,

the silicon wafer is etched,

the etching mask is removed from the silicon wafer

the silicon wafer is attached to a support structure, and

the silicon wafer is cut into separate pressure sensor elements,

wherein the etching mask (18) is attached over pressure sensor structures, essentially diamond shaped in relation to the direction <

110>

, to be anisotropically wet etched into a silicon wafer, which is oriented in the direction (100), such that the ends of slots (19) in the etching mask (18) coincide with the corners of the pressure sensor structures to be etched.

2. Method of claim 1, wherein the etching mask (18) may comprise slots (19) oriented in the direction <

110>

.

3. Method of claim 1, wherein the etching mask (18) may comprise structures (20) for delaying etching underneath the mask.

4. Method of claim 1, wherein pressure sensitive membrane areas are shaped on the opposite side of the etched wafer or in the support structure facing the membrane.

5. Method of claim 4, wherein the shape of the membrane areas shaped on the opposite side of the etched wafer has essentially rounded corners.

6. Method of claim 4, wherein the shape of the membrane areas shaped on the opposite side of the etched wafer has essentially rounded corners and the membrane is supported at its center.

7. Method of claim 4, wherein the membrane areas are shaped by removing material by, for example, etching or oxidizing.

8. Method of claim 1, wherein the etching solution to be used is an anisoptropic alkali, for example a solution of potassium hydroxide (KOH), a solution of ethylene diamine pyrocathechin (EDP), a solution of sodium hydroxide (NaOH) or a solution of tetramethylammonium hydroxide (TMAH).

9. A capacitive pressure sensor, wherein the silicon crystal planes {111} are located at the corners of the wet etched membrane well of the pressure sensor element.

10. Pressure sensor according to claim 9, wherein pressure sensitive membrane areas are shaped on the opposite side of the etched wafer or in the support structure facing the membrane.

11. Pressure sensor according to claim 10, wherein the shape of the pressure sensitive membrane areas shaped on the opposite side of the etched wafer has essentially rounded corners.

12. Pressure sensor according to claim 9, wherein the membrane is supported at its center.