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Thin films and methods of making them

  • US 20050250302A1
  • Filed: 07/12/2005
  • Published: 11/10/2005
  • Est. Priority Date: 02/12/2001
  • Status: Active Grant
First Claim
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1. A method of increasing semiconductor manufacturing device yield, comprising:

  • identifying a semiconductor device manufacturing process that comprises depositing a Si-containing film onto a substrate using silane to produce a number NT of semiconductor devices, of which a number NA of the devices are acceptable and a number NU of the devices are unacceptable;

    wherein the Si-containing film has an average thickness of about 2000 Å

    or less;

    wherein the substrate has a surface area of about 300 cm2 or greater; and

    wherein the process has a device yield equal to NA/NT; and

    replacing the silane with trisilane in the semiconductor device manufacturing process to increase the device yield.

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