Method for manufacturing semiconductor device

• US 20050250308A1
• Filed: 05/04/2005
• Published: 11/10/2005
• Est. Priority Date: 05/07/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamaguchi, Tetsuji, Futamura, Tomoya, Asano, Etsuko, Yazaki, Naomi, Nishikawa, Tomoko
• Granted Patent: US 7,521,368 B2
• Time in Patent Office: Days
• US Class Current: 438/618
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a semiconductor layer, a gate insulating film, and a gate electrode over a substrate;

forming an interlayer insulating film over the semiconductor layer, the gate insulating film, and the gate electrode;

forming a conductive film over the interlayer insulating film; and

forming a contact hole in the interlayer insulating film and the conductive film by dry etching.

2. The method for manufacturing the semiconductor device according to claim 1, wherein the conductive film contains Ti, Ta, W. or nitride thereof.

3. A method for manufacturing a semiconductor device comprising:

forming a semiconductor layer, a gate insulating film, and a gate electrode over a substrate;

forming an interlayer insulating film over the semiconductor layer, the gate insulating film, and the gate electrode;

forming a conductive film over the interlayer insulating film;

forming a contact hole in the interlayer insulating film and the conductive film;

forming a second electrode connecting to the semiconductor layer or the gate electrode through the contact hole; and

removing part of the conductive film in a self-aligned manner by using the second electrode as a mask.

4. The method for manufacturing a semiconductor device according to claim 3, wherein the conductive film contains Ti, Ta, W, or nitride thereof.

5. A method for manufacturing a semiconductor device comprising:

forming a semiconductor layer, a gate insulating film, and a gate electrode over a substrate;

forming a first interlayer insulating film over the semiconductor layer, the gate insulating film, and the gate electrode;

forming a first conductive film over the first interlayer insulating film;

forming a first contact hole in the first interlayer insulating film and the first conductive film;

forming a second electrode connecting to the semiconductor layer or the gate electrode through the first contact hole;

removing part of the first conductive film in a self-aligned manner by using the second electrode as a mask;

forming a second interlayer insulating film over the first interlayer insulating film and the second electrode;

forming a second conductive film over the second interlayer insulating film; and

forming a second contact hole in the second interlayer insulating film and the second conductive film by dry etching.

6. The method for manufacturing a semiconductor device according to claim 5, wherein a third electrode is formed through the second contact hole over the second conductive film.

7. The method for manufacturing a semiconductor device according to claim 5, wherein the second interlayer insulating film is a planarizing film.

8. The method for manufacturing a semiconductor device according to claim 5, wherein the first conductive film contains Ti, Ta, W, or nitride thereof.

9. The method for manufacturing a semiconductor device according to claim 5, wherein the second conductive film contains Ti, Ta, W, or nitride thereof.

10. The method for manufacturing a semiconductor device according to claim 5, wherein the second interlayer insulating film contains an organic material.

11. The method for manufacturing a semiconductor device according to claim 5, wherein the second interlayer insulating film contains a silicon oxide film formed using siloxane.