Method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device comprising:
- forming a semiconductor layer, a gate insulating film, and a gate electrode over a substrate;
forming an interlayer insulating film over the semiconductor layer, the gate insulating film, and the gate electrode;
forming a conductive film over the interlayer insulating film; and
forming a contact hole in the interlayer insulating film and the conductive film by dry etching.
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Abstract
The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.
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Citations
11 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor layer, a gate insulating film, and a gate electrode over a substrate;
forming an interlayer insulating film over the semiconductor layer, the gate insulating film, and the gate electrode;
forming a conductive film over the interlayer insulating film; and
forming a contact hole in the interlayer insulating film and the conductive film by dry etching. - View Dependent Claims (2)
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3. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor layer, a gate insulating film, and a gate electrode over a substrate;
forming an interlayer insulating film over the semiconductor layer, the gate insulating film, and the gate electrode;
forming a conductive film over the interlayer insulating film;
forming a contact hole in the interlayer insulating film and the conductive film;
forming a second electrode connecting to the semiconductor layer or the gate electrode through the contact hole; and
removing part of the conductive film in a self-aligned manner by using the second electrode as a mask. - View Dependent Claims (4)
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5. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor layer, a gate insulating film, and a gate electrode over a substrate;
forming a first interlayer insulating film over the semiconductor layer, the gate insulating film, and the gate electrode;
forming a first conductive film over the first interlayer insulating film;
forming a first contact hole in the first interlayer insulating film and the first conductive film;
forming a second electrode connecting to the semiconductor layer or the gate electrode through the first contact hole;
removing part of the first conductive film in a self-aligned manner by using the second electrode as a mask;
forming a second interlayer insulating film over the first interlayer insulating film and the second electrode;
forming a second conductive film over the second interlayer insulating film; and
forming a second contact hole in the second interlayer insulating film and the second conductive film by dry etching. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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Specification