In-situ oxide capping after CVD low k deposition
First Claim
1. A method of processing a substrate, comprising:
- flowing one or more organosilicon compounds and one or more oxidizing gases into a chamber;
depositing a low dielectric constant film comprising silicon, carbon, and oxygen on a substrate in the chamber in the presence of RF power;
increasing a total flow rate of the one of more oxidizing gases into the chamber;
decreasing a total flow rate of the one or more organosilicon compounds into the chamber; and
depositing an oxide rich cap on the low dielectric constant film in the chamber in the presence of RF power.
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Abstract
A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.
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Citations
26 Claims
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1. A method of processing a substrate, comprising:
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flowing one or more organosilicon compounds and one or more oxidizing gases into a chamber;
depositing a low dielectric constant film comprising silicon, carbon, and oxygen on a substrate in the chamber in the presence of RF power;
increasing a total flow rate of the one of more oxidizing gases into the chamber;
decreasing a total flow rate of the one or more organosilicon compounds into the chamber; and
depositing an oxide rich cap on the low dielectric constant film in the chamber in the presence of RF power. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of processing a substrate, comprising:
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flowing an organosilicon compound, an oxidizing gas, and a carrier gas into a chamber;
depositing a low dielectric constant film comprising silicon, carbon, and oxygen on a substrate in the chamber in the presence of RF power at a first power level;
increasing a flow rate of the oxidizing gas into the chamber;
decreasing a flow rate of the organosilicon compound into the chamber; and
depositing an oxide rich cap on the low dielectric constant film in the chamber in the presence of the RF power at the first power level. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of processing a substrate, comprising:
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flowing an organosilicon compound, an oxidizing gas, and a carrier gas into a chamber;
depositing a low dielectric constant film comprising silicon, carbon, and oxygen on a substrate in the chamber in the presence of RF power;
decreasing the percent volume of the oxidizing gas in the chamber;
decreasing the percent volume of the organosilicon compound in the chamber;
increasing the percent volume of the carrier gas in the chamber; and
depositing an oxide rich cap on the low dielectric constant film in the chamber in the presence of the RF power. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A substrate processing system, comprising:
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a gas panel comprising a first precursor source fluidly connected to a first vaporizer and a second precursor source fluidly connected to a second vaporizer;
a chemical vapor deposition chamber comprising a heated gas feedthrough comprising a wall defining a feedthrough hole; and
a line fluidly connecting the first vaporizer and the second vaporizer to the chemical vapor deposition chamber, wherein the line is configured to heat a fluid passing therethrough. - View Dependent Claims (22, 23, 24, 25, 26)
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Specification