Light emitting diode with enhanced luminance and method for manufacturing the same

• US 20050253129A1
• Filed: 09/23/2004
• Published: 11/17/2005
• Est. Priority Date: 05/13/2004
• Status: Abandoned Application

• Current Assignee: Biing-Jay Lee, United Epitaxy Company, Ltd. (Ennostar, Inc.)
• Original Assignee: Biing-Jay Lee
• Inventors: Tsai, Tzong-Liang, Chang, Chih-Sung, Chen, Tzer-Perng, Wen, Wei-Chih
• Application Number:
  US10/949,456
• Publication Number:
  US 20050253129A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting diode with enhanced luminance and a method for manufacturing the light emitting diode are provided. The light emitting diode includes a substrate, a passivation layer including a material selected from a group consisting of a metal alloy, a metal oxide, a metal nitride, organic materials, inorganic materials and a combination thereof, a reflection layer, a first semiconductor layer, a multi-layer quantum well structure and a second semiconductor layer. The substrate possesses excellent electric/thermal conductivities.

Claims

1. A light emitting diode, comprising:

a substrate;

a passivation layer on said substrate, said passivation layer comprising a material selected from a group consisting of alloy, oxide, nitride, and a combination thereof;

a reflection layer on said passivation layer, said reflection layer having a high reflectivity to an electromagnetic wave;

a first semiconductor layer on said reflection layer;

a multi-layer quantum well structure on said first semiconductor layer; and

a second semiconductor layer on said multi-layer quantum well structure.

2. The light emitting diode of claim 1, further comprising a transparent conductive layer interposed between said reflection layer and said first semiconductor layer.

3. The light emitting diode of claim 1, further comprising an adhesion layer interposed between said substrate and said passivation layer.

4. The light emitting diode of claim 1, wherein said passivation layer is electric conductive.

5. The light emitting diode of claim 4, further comprising a-first electrode and a second electrode on opposite sides with respect to said light emitting diode, wherein said first electrode is on said substrate, and said second electrode is on said second semiconductor layer.

6. The light emitting diode of claim 1, further comprising a first electrode and a second electrode on a same side with respect to said light emitting diode, wherein said first electrode is on said first semiconductor layer, and said second electrode is on said second semiconductor layer.

7. A light emitting diode, comprising:

a substrate;

an adhesion layer on said substrate;

a passivation layer on said adhesion layer, said passivation layer comprising a material selected from a group consisting of alloy, oxide, nitride, and a combination thereof;

a reflection layer on said passivation layer, said reflection layer having a high reflectivity to an electromagnetic wave;

a transparent conductive layer on said reflection layer;

a first semiconductor layer on said transparent conductive layer;

a multi-layer quantum well structure on said first semiconductor layer; and

a second semiconductor layer on said multi-layer quantum well structure.

8. The light emitting diode of claim 7, wherein said passivation layer is electric conductive.

9. The light emitting diode of claim 8, farther comprising a first electrode and a second electrode on opposite sides with respect to said light emitting diode, wherein said first electrode is on said substrate, and said second electrode is on said second semiconductor layer.

10. The light emitting diode of claim 7, further comprising a first electrode and a second electrode on a same side with respect to said light emitting diode, wherein said first electrode is on said first semiconductor layer, and said second electrode is on said second semiconductor layer.

11. A method of forming a light emitting diode, comprising:

providing a first substrate;

forming a first semiconductor layer on said first substrate;

forming a multi-layer quantum well structure on said first semiconductor layer;

forming a second semiconductor layer on said multi-layer quantum well structure;

forming a reflection layer on said second semiconductor layer, said reflection layer having a high reflectivity to an electromagnetic wave;

forming a passivation layer on said reflection layer, said passivation layer comprising a material selected from a group consisting of alloy, oxide, nitride, and a combination thereof,

providing a second substrate on said passivation layer, said second substrate having electric/thermal conductivities higher than those of said first substrate; and

removing said first substrate.

12. The method of claim 11, further comprising a step of forming a transparent conductive layer on said second semiconductor layer before said reflection layer is formed.

13. The method of claim 11, further comprising a step of forming an adhesion layer on said passivation layer before said second substrate is provided.

14. The method of claim 11, wherein said passivation layer is electric non-conductive.

15. The method of claim 11, further comprising forming a first electrode and a second electrode on opposite sides with respect to said light emitting diode, wherein said first electrode is on said first semiconductor layer, and said second electrode is on said second substrate.

16. The method of claim. 14, further comprising forming a first electrode and a second electrode on a same side with respect to said light emitting diode, wherein said first electrode is on said first semiconductor layer, and said second electrode is on said second semiconductor layer.

17. The method of claim 11, further comprising performing a microwave treatment on said light emitting diode.

18. A method of forming a light emitting diode, comprising:

providing a first substrate;

forming a first semiconductor layer on said first substrate;

forming a multi-layer quantum well structure on said first semiconductor layer;

forming a second semiconductor layer on said multi-layer quantum well structure;

forming a transparent conductive layer on said second semiconductor layer;

forming a reflection layer on said transparent conductive layer, said reflection forming a passivation layer on said reflection layer, said passivation layer comprising a material selected from a group consisting of alloy, oxide, nitride, and a combination thereof;

forming an adhesion layer on said passivation layer;

providing a second substrate on said adhesion layer, said second substrate having electric/thermal conductivities higher than those of said first substrate; and

removing said first substrate.

19. The method of claim 18, wherein said passivation layer is electric non-conductive.

20. The method of claim 18, further comprising forming a first electrode and a second electrode on opposite sides with respect to said light emitting diode, wherein said first electrode is on said first semiconductor layer, and said second electrode is on said second substrate.

21. The method of claim 19, further comprising forming a first electrode and a second electrode on a same side with respect to said light emitting diode, wherein said first electrode is on said first semiconductor layer, and said second electrode is on said second semiconductor layer.

22. The method of claim 18 further comprising performing a microwave treatment on said light emitting diode.