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Silicon optoelectronic device using silicon nanowire and method for preparing the same

  • US 20050253138A1
  • Filed: 12/16/2004
  • Published: 11/17/2005
  • Est. Priority Date: 04/23/2004
  • Status: Abandoned Application
First Claim
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1. A silicon optoelectronic device comprising a) an n-type or p-type semiconductor substrate;

  • b) silicon nanowire which is formed on one side of the substrate and is rendered conductive by a p-type or n-type dopant and erbium;

    c) an insulating film which is formed on the substrate and encloses the silicon nanowire;

    d) a first electrode which is formed on the silicon nanowire, a part of which has been exposed by etching, and enables electrical connection of the silicon nanowire; and

    e) a second electrode which is formed on one side of the substrate and enables electrical connection of the exposed silicon nanowire and the substrate.

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