Semiconductor light emitting device and method of manufacturing the same

• US 20050253153A1
• Filed: 04/11/2005
• Published: 11/17/2005
• Est. Priority Date: 04/23/2004
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Harada, Mitsunori
• Granted Patent: US 8,884,315 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/644 in intimate contact or integrated with parts of the device other than the semiconductor body

Abstract

A semiconductor light emitting device can include a base having a cavity provided for housing an LED chip and a resin spacer therein. The resin spacer can be composed of at least two layers of spacers including a transparent resin spacer and a wavelength conversion spacer mixed with a fluorescent material and formed to have an almost constant thickness. The wavelength conversion spacer can include a metallic radiation mesh or radiation wire disposed therein.

Claims

1. A semiconductor light emitting device, comprising:

a base having a cavity provided therein;

an LED chip located adjacent the base;

a spacer located adjacent the base, the spacer including at least two layers, including

a transparent resin spacer, and

a wavelength conversion spacer including a fluorescent material and having a substantially constant thickness, wherein the wavelength conversion spacer includes one of a metallic radiation mesh and a radiation wire.

2. The semiconductor light emitting device according to claim 1, wherein the one of the radiation mesh and radiation wire has a portion mechanically connected to the base.

3. The semiconductor light emitting device according to claim 1, wherein the one of the radiation mesh and radiation wire is composed of any one of gold, aluminum and copper.

4. The semiconductor light emitting device according to claim 1, wherein the radiation mesh is formed through a process of etching.

5. The semiconductor light emitting device according to claim 1, wherein the radiation mesh is formed through a process of micro electro mechanical systems.

6. The semiconductor light emitting device according to claim 2, wherein the radiation mesh is formed through a process of etching.

7. The semiconductor light emitting device according to claim 2, wherein the radiation mesh is formed through a process of micro electro mechanical systems.

8. The semiconductor light emitting device according to claim 1, wherein the fluorescent material is mixed within resin of the wavelength conversion spacer.

9. The semiconductor light emitting device according to claim 1, wherein the one of the radiation mesh and radiation wire is disposed in the wavelength conversion spacer.

10. The semiconductor light emitting device according to claim 1, further comprising:

a wiring pad located on a top surface of the base.

11. The semiconductor light emitting device according to claim 1, further comprising:

a wiring pad located at a bottom portion of the base.

12. The semiconductor light emitting device according to claim 11, wherein the wiring pad is located under the LED chip.

13. A semiconductor light emitting device, comprising:

a base having a cavity provided therein;

an LED chip located adjacent the base;

a transparent layer located adjacent the base, and

a wavelength conversion layer located adjacent the transparent layer and including a fluorescent material, and

one of a metallic radiation mesh and a radiation wire located adjacent the cavity of the base.

14. The semiconductor light emitting device according to claim 13, wherein the one of the radiation mesh and radiation wire has a portion mechanically connected to the base.

15. The semiconductor light emitting device according to claim 13, wherein the one of the radiation mesh and radiation wire is composed of any one of gold, aluminum and copper.

16. The semiconductor light emitting device according to claim 13, wherein the radiation mesh is formed through a process of etching.

17. The semiconductor light emitting device according to claim 13, wherein the radiation mesh is formed through a process of micro electro mechanical systems.

18. The semiconductor light emitting device according to claim 13, wherein the one of the radiation mesh and radiation wire is disposed in the wavelength conversion spacer.

19. A method of forming a semiconductor light emitting device, comprising:

providing a base having a cavity provided therein, an LED chip located adjacent the base, a spacer located adjacent the base, the spacer including at least two layers, including, a transparent resin spacer, and a wavelength conversion spacer including a fluorescent material, wherein the wavelength conversion spacer includes one of a metallic radiation mesh and a radiation wire;

connecting the one of the metallic radiation mesh and radiation wire adjacent to the cavity of the base.

20. The method of forming a semiconductor light emitting device according to claim 19, wherein connecting includes embedding the one of the metallic radiation mesh and radiation wire in the wavelength conversion spacer.