Semiconductor device and manufacturing method thereof

• US 20050253199A1
• Filed: 04/30/2005
• Published: 11/17/2005
• Est. Priority Date: 05/11/2004
• Status: Abandoned Application

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Nagaoka, Kohjiro
• Application Number:
  US11/119,270
• Publication Number:
  US 20050253199A1
• Time in Patent Office: Days
• US Class Current: 257/374
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/76227 the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals

Abstract

In order to improve embeddability of an embedded insulating film to a filling portion to have a preferable embedded structure, the present invention provides a semiconductor device having an embedded structure in which an embedded insulating film is embedded in a filling portion formed in or on a substrate. The embedded structure includes an underlying insulating film containing a silicon nitride film formed on an inner wall of the filling portion by a chemical vapor deposition method using material gas containing hexachlorodisilane, and an embedded insulating film formed by filling in the filling portion via the underlying insulating film.

Claims

1. A semiconductor device having an embedded structure in which an embedded insulating film is embedded in a filling portion formed in or on a substrate, said embedded structure comprising:

an underlying insulating film containing a silicon nitride film formed on an inner wall of said filling portion by a chemical vapor deposition method using material gas containing hexachlorodisilane, and an embedded insulating film formed by filling in said filling portion via said underlying insulating film.

2. The semiconductor device as claimed in claim 1, wherein said embedded insulating film includes a silicon oxide film.

3. The semiconductor device as claimed in claim 2, wherein said embedded insulating film includes a silicon oxide film formed by the sub-atmospheric CVD method.

4. The semiconductor device as claimed in claim 1, wherein:

said filling portion includes a trench for element isolation, and

said substrate is element-isolated by an embedded structure having said underlying insulating film and said embedded insulating film.

5. A method of manufacturing a semiconductor device including a step of forming an embedded structure by embedding an embedded insulating film within a filling portion formed in or on a substrate, said method comprising:

a step of forming on an inner wall of said filling portion an underlying insulating film containing a silicon nitride film by the chemical vapor deposition method using a material gas containing hexachlorodisilane; and

a step of forming an embedded insulating film so as to fill in said filling portion via said underlying insulating film.

6. The method of manufacturing a semiconductor device as claimed in claim 5, wherein:

said embedded insulating film including a silicon oxide film is formed in said step of forming an embedded insulating film.

7. The method of manufacturing a semiconductor device as claimed in claim 6, wherein:

said embedded insulating film including a silicon oxide film is formed by the sub-atmospheric CVD method in said step of forming an embedded insulating film.

8. The method of manufacturing a semiconductor device as claimed in claim 5, wherein:

said filling portion includes a trench for element isolation.